Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells

In situ optical emission spectroscopy diagnostics of glow discharges in SiH4/GeH4/H2

“…[1][2][3][4] A lot of work has been done to obtain high quality films and high-efficiency solar cells, which has mainly focused on the effect of deposition parameters. [1][2][3][4] A lot of work has been done to obtain high quality films and high-efficiency solar cells, which has mainly focused on the effect of deposition parameters.…”

“…Amorphous silicon-germanium (a-SiGe) alloys have widely been used as narrow bandgap i-layers in multi-junction silicon based solar cells because their optical bandgap (E g ) shis to lower energies with increasing germanium (Ge) content. [1][2][3][4] A lot of work has been done to obtain high quality lms and highefficiency solar cells, which has mainly focused on the effect of deposition parameters. [5][6][7] However, it is necessary to clarify the radical production mechanism behind the growth of thin lms by changing parameters.…”

Review of thin-film silicon deposition techniques for high-efficiency solar cells developed at Panasonic/Sanyo

“…In 1993, the world's highest initial conversion efficiency of 12.0% was achieved for an a-Si single junction solar cell (100 Â 100 mm) [1]. In 2001, the world's highest stabilized conversion efficiency of 10% was also achieved for an a-Si/a-SiGe tandem module (900 Â 900 mm 2 ) with a depositionrate of over 0.2 nm/s [6,7] for the bottom a-SiGe layer. Replacing the bottom a-SiGe layer with mc-Si effectively improves longwavelength sensitivity and conversion efficiency.…”

Study of Transition Region of p-Type SiOx:H as Window Layer in a-Si:H/a-Si1-yGeyChen1, Chen2, Tsai3 2016International Journal of Photoenergy2000View full textAdd to dashboardCite

“…It has been shown that the hydrogenated amorphous silicon germanium (a-Si 1− Ge :H) is a promising material as low-bandgap absorber in multijunction solar cells, due to its higher absorption coefficient compared to the hydrogenated amorphous silicon (a-Si:H) [5]. Studies have also reported that the a-Si:H/a-Si 1− Ge :H tandem cell offered a high efficiency with broadband absorption, low absorber thickness, and high production throughput, which has attracted much attention to be employed in the triple-or multijunction solar cells [6,7].…”