Very low Schottky barrier to n-type silicon with PtEr-stack silicide

Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation

“…In order to improve the performance of SB-MOSFETs, the carrier injection, which is determined by the Schottky barrier between the source and the channel, has to be improved. A reduction of the SB height can be achieved by Fermi level depinning with an insulator inserted between the metallic electrode and the semiconductor [4,5], low-SB silicides [6][7][8] as well as dopant segregation (DS) [2,3,9]. In this case, dopants piled-up at the silicide/silicon interface during DS form a thin highly doped layer which causes a strong band bending.…”

Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111)

“…[6][7][8][9] Moreover, the abruptness of the silicide/vacuum interface makes them good candidates to grow new layers on top, offering new perspectives for integrated silicon technology. 10 However, despite their technological relevance an important issue remains open: which is the atomic structure of these silicide surfaces? In this paper we perform a detailed surface structural study for the yttrium silicide by means of dynamical low-energy electron diffraction ͑LEED͒.…”

Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi<inf>2</inf> source

“…Schottky barrier FETs have advantages in lower extrinsic parasitic resistance and higher carrier injection velocity [3] than conventional S/D, and so on, aside from the endurance for short channel effect. As the method that realize the high-performance Schottky barrier FETs, to use metal-silicide Schottky junctions for S/D, which enables sharp and abrupt atomic profile to the channel region have been investigated [4][5][6]. In addition to its relatively low resistivity and less contaminated interface can be obtained owing to reactively formed interface enabling to suppress the variability.…”