Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

Benchimol, J.L.; Alexandre, François; Dubon‐Chevallier, C.; Heliot, F.; Bourguiga, R.; Dangla, J.; Sermage, B.

doi:10.1049/el:19920853

Cited by 28 publications

(5 citation statements)

References 15 publications

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“…Our lifetime values are more compatible with the CBE and MOCVD data of Benchimol et al 5,6 but two orders of magnitude larger than their MBE results. A recent analysis 19 of heterojunction bipolar transistor gain, with a base doping of 4.9ϫ10 19 cm Ϫ3 , indicated lifetimes ranging between 20 and 50 ps.…”

Section: Auger Recombination In Heavily Carbon-doped Gaassupporting

confidence: 89%

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Auger recombination in heavily carbon-doped GaAs

Ahrenkiel

Ellingson

Metzger

et al. 2001

Applied Physics Letters

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Section: Auger Recombination In Heavily Carbon-doped Gaassupporting

confidence: 89%

“…Benchimol et al suggested that impurities in the carbon source may be source impurity incorporation in the film that degrades the MBE lifetime. Their CBE and MOCVD data 5,6 showed inflection points in the vs p curve at 1ϫ10 19 and at 1 ϫ10 20 cm Ϫ3 , respectively.…”

Section: Auger Recombination In Heavily Carbon-doped Gaasmentioning

confidence: 97%

Auger recombination in heavily carbon-doped GaAs

Ahrenkiel

Ellingson

Metzger

et al. 2001

Applied Physics Letters

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“…Different transient PL studies of heavily doped GaAs:C have been reported so far. [2][3][4][5][6][7][8][9] A series of articles by Strauss et al, 4 Heberle et al, 5 and Strauss et al 6 focuses on this interplay between intrinsic and extrinsic parameters in free a͒ Author to whom correspondence should be addressed; electronic mail: tomm@mbi-berlin.de GaAs:C layers. In particular, the effects of surface recombination on the recombination dynamics are addressed in detail in these studies.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, the effects of surface recombination on the recombination dynamics are addressed in detail in these studies. Benchimol et al 7,8 and Ahrenkiel et al 9 circumvent the effects of recombination at the free surfaces by investigating transient PL of AlGaAs/GaAs:C/AlGaAs structures. Values for radiative and Auger recombination coefficients were obtained.…”

Section: Introductionmentioning

confidence: 99%

Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

Maaßdorf

Grämlich

Richter

et al. 2002

Journal of Applied Physics

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Room-temperature photoluminescence decay time measurements in heavily doped GaAs:C-layers designed as base layers for heterojunction bipolar transistors are reported. These measurements provide access to nonequilibrium minority carrier lifetimes that determine the current gains of those devices. By systematically studying transient luminescence spectra over a wide range of excitation densities between 10 13 and 10 18 cm Ϫ3 , we demonstrate the importance of carrier trapping processes at low excitation densities. Optimized excitation conditions that achieve trap saturation but also avoid stimulated emission are found for densities of (1-3)ϫ10 17 cm Ϫ3 /pulse. Detection is limited to a spectral window well above the energy gap ͑beyond 1.5 eV͒. Values for both Auger and radiative recombination coefficients are given.

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“…Low-and highfield transport properties of GaInP are comparable with those of AlGaAs [4], and the relatively large energy bandgap of GaInP (1.92 eV) is an additional advantage which yields a larger breakdown voltage. Recently, various groups have reported high-performance single-and doubleheterojunction bipolar transistors based on the GaInP/GaAs material system [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Gas source molecular beam epitaxy growth and characterization of modulation-doped field-effect transistor structures

Besikci

Civan

Özder

et al. 1997

Semicond. Sci. Technol.

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Lattice-matched Ga 0.51 In 0.49 P/GaAs and strained Ga 0.51 In 0.49 P/In x Ga 1−x As/GaAs (0.1 ≤ x ≤ 0.25) modulation-doped field-effect transistor structures were grown by gas source molecular beam epitaxy by using Si as dopant. Detailed electrical characterization results are presented. The Ga 0.5 In 0.49 P/In 0.25 Ga 0.75 As/GaAs sample yielded dark two-dimensional electron gas densities of 3.75 × 10 12 cm −2 (300 K) and 2.3 × 10 12 cm −2 (77 K) which are comparable to the highest sheet electron densities reported in AlGaAs/InGaAs/GaAs and InAlAs/InGaAs/InP modulation-doped heterostructures. Persistent photoconductivity was observed in the strained samples only. A 0.797 eV deep level has been detected in the undoped GaInP layers of the structures. Another level, with DLTS peak height dependent on the filling pulse width, has been detected at the interface of the strained samples. Based on the DLTS and Hall effect measurement results, this level, which seems to be the origin of persistent photoconductivity, can be attributed to the strain relaxation related defects.

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Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

Cited by 28 publications

References 15 publications

Auger recombination in heavily carbon-doped GaAs

Auger recombination in heavily carbon-doped GaAs

Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

Gas source molecular beam epitaxy growth and characterization of modulation-doped field-effect transistor structures

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