Vertically stacked Bi₂Se₃/MoTe₂ heterostructure with large band offsets for nanoelectronics

Abstract

In recent years, two-dimensional materials based tunneling heterojunctions are emerging as a multi-functional architecture for logic circuits and photodetection owing to flexibilible stacking, optical sensitivity, tunable detection band and highly...

Polarity‐Switchable and Self‐Driven Photo‐Response Based on Vertically Stacked Type‐III GeSe/SnS2 Heterojunction

“…As a result, the GeSe (SnS 2 ) device exhibited p-type (n-type) characteristic with carrier concentration are 3.46 × 10 12 cm −2 and 4.47 × 10 12 cm −2 , respectively, calculated by formula when V gs = 0 V: n = e −1 C ox |V gs − V th |, (where C ox is the capacitance per unit area of the 300-nm-thick SiO 2 gate oxide layer, e is the electronic charge and V th is the threshold voltage). [41] After contact, the electrons in the GeSe can diffuse to the SnS 2 side until the thermal equilibrium, leading a band bending at interface and the total builtin potential is ≈0.163 eV as shown in Figure 1f. [42] Figure 2a,b depict the transfer characteristics of GeSe/SnS 2 vdWs FET under various forward and reverse V ds , respectively.…”

A solution-fabricated tellurium/silicon mixed-dimensional van der Waals heterojunction for self-powered photodetectors

“…Afterward, the as-obtained Te nanosheet was transferred onto the predefined Si window by a polyvinyl alcohol (PVA)-assisted transfer method. 38 In the end, Cr/Au (10/50 nm) electrodes served as the top contact to Te, whereas an Ag paste was used as the back contact to Si. Notably, part of Te on the Si substrate with the electrode is shown in Fig.…”

Te/SnS2 tunneling heterojunctions as high-performance photodetectors with superior self-powered properties

“…Typically, MoS 2 /WS 2 17 and MoS 2 /BP 18 vdWHs exhibit strong interlayer coupling and have comparable photoresponsivity of 2.3 and 22.3 A/W in visible range, respectively. On the other hand, type-III (broken gap) heterojunctions, which can induce band-to-band tunneling of photoinduced carrier at interface, have drawn special attention due to their unique properties of ultrahigh reverse rectification and ultralow forward current 13,[19][20][21][22][23] . In order to construct tunneling structure, a narrow-bandgap semiconductor material (e.g., AsP, BP, PtS 2 etc.)…”