A solution-fabricated tellurium/silicon mixed-dimensional van der Waals heterojunction for self-powered photodetectors

Abstract

Monoelemental two-dimensional (2D) Tellurium (Te) has demonstrated excellent potential candidate for next-generation (opto)electronic devices due to its unique properties such as topological surface states, high carrier mobility, high light absorption...

Polarity-Reversible Te/WSe2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

“…A shift in the transistor threshold voltage could be observed from the upper part of Figure d, indicating that both photoconductive and photogating effects contribute to photocurrent generation . Particularly, the peak R reaches 1.9 × 10 3 A W –1 for near-infrared 980 nm, corresponding to a calculated D of 2.8 × 10 12 Jones (Figure S13 of the Supporting Information), among the highest reported in Te-based photodetectors. ,− Figure f presents partial time-resolved response curves under 980 nm with a switching frequency of 0.1 and 0.2 Hz for ∼280 continuous cycles, revealing a steady photoresponse characteristic. The full I ph – t spectrum and corresponding response time are shown in Figure S14 of the Supporting Information.…”

Polarization‐Resolved p‐Se/n‐WS2 Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger

“…Table 1 compares the device performance with that in the previously reported 2D material‐based photodetectors, implying the superior photovoltaic and photodetection performance of our heterojunction devices. [ 24,30–33 ]…”

“…Table 1 compares the device performance with that in the previously reported 2D material-based photodetectors, implying the superior photovoltaic and photodetection performance of our heterojunction devices. [24,[30][31][32][33] Polarization-sensitive photoresponse is a new degree of freedom for extracting the polarization information of light, enabling the photodetection and imaging with higher contrast in a complex environment. [8,34] The prerequisite to realize the polarized light detection is the anisotropic crystal structure and photoabsorption in low-symmetric van der Waals materials such as GeSe, BP, p-Te, ReS 2, and so on.…”

Infrared Photodetection from 2D/3D van der Waals Heterostructures

“…Besides for BP and PdSe 2 , Te has also been used in the development of polarization detectors due to its structural asymmetry, excellent binomial color ratio, and high air stability (42 months). As shown in Figure 8 e, Tao Zheng et al prepared a Te/Si mixed van der Waals heterojunction, which has a large built-in electric field to quickly separate widely-generated carriers and exhibit excellent anisotropy [ 120 ]. Figure 8 f shows photocurrents at different polarization angles, and the photocurrent anisotropy ratio is 2.1 under 635 nm illumination.…”

“…( d ) Photocurrent of Gr/PdSe 2 /Ge detector as a function of polarization angle at zero bias [ 119 ] (copyright 2019, American Chemical Society). ( e ) Schematic diagram of Te/Si heterojunction detector [ 120 ] (copyright 2022, Royal Society of Chemistry). ( f ) Normalized photocurrent with 635 nm laser at zero bias voltage [ 120 ] (copyright 2022, Royal Society of Chemistry).…”