Vertically aligned epitaxial KNbO3 nanorod array for piezoelectric energy harvester and second harmonic generator

Kang, Pil Gu; Lee, Tae Kwon; Ahn, Chang Won; Kim, Ill Won; Lee, Hyunhwa; Choi, Soo Bong; Sung, K. D.; Jung, Jong Hoon

doi:10.1016/j.nanoen.2015.09.004

Cited by 31 publications

(14 citation statements)

References 30 publications

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“…Since the first demonstration of electrical generation from the lateral bending of ZnO NWs in 2006, then defining for the first time the nanogenerator concept [ 9 ], other 1D-nanostructures have been investigated such as CdS [ 10 ], CdSe [ 11 ], PZT [ 12 ], BaTiO 3 [ 13 ], KNBO 3 [ 14 ] … These last years, the attention has turned to III-nitride NWs thanks to their high-piezoelectric coefficients [ 15 ] and their strong piezo-generation response. The first mechanical-electrical conversion from GaN nanorods has been reported in 2007 [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

et al. 2018

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We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm2. These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources.

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Section: Introductionmentioning

confidence: 99%

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

et al. 2018

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“…Since the first demonstration of electrical generation from the lateral bending of ZnO NWs in 2006, then defining for the first time the nanogenerator concept [9], other 1D-nanostructures have been investigated such as NWs of CdS [10], CdSe [11], PZT [12], BaTiO3 [13], KNBO3 [14] … These last years, the attention has turned to III-nitride NWs thanks to their high-piezoelectric coefficients [15] and their strong piezo-generation response. The first mechanical-electrical conversion from GaN nanorods has been reported in 2007 [16].…”

Section: Introductionmentioning

confidence: 99%

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

Jegenyés

Morassi

Chrétien

et al. 2018

Preprint

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We demonstrate for the first time efficient mechanical to electrical energy conversion using InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. By considering these output signals, we estimate a maximum power density generated by one layer of dense InGaN/GaN-based NW of about 3.3 W/cm2. These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources.

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“…Ferroelectric nanostructures have attracted enormous interest in microelectronics for various applications including sensors, energy harvesters, and nonvolatile memories due to the inherent coupling between electromechanical parameters and confined polarization switching behavior along the growth direction. Typically, ferroelectric nanostructures have been synthesized by chemical methods in the powder form, free‐standing membranes and composites, and vertically aligned nanostructures on rigid substrates . More recently, laterally aligned molecular ferroelectric thin films have been demonstrated as a promising nanostructure .…”

Section: Introductionmentioning

confidence: 99%

“…It is worth noting that all ferroelectric materials are also piezoelectric but not all piezoelectrics are ferroelectric. Currently, utilized synthesis processes for PZT ferroelectric nanostructures only provide homogeneous coverage over a small area (≈mm 2 ) and result in low volumetric density (number of vertically aligned nanorods per unit area) . Furthermore, the chemical processes used for the synthesis of ferroelectric nanostructures, especially hydrothermal method, are not compatible with current semiconductor technology limiting their integration with Si.…”

Section: Introductionmentioning

confidence: 99%

Wafer‐Scale Single‐Crystalline Ferroelectric Perovskite Nanorod Arrays

Kang

Lee

Maurya

et al. 2017

Adv Funct Materials

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1D ferroelectric nanostructures are promising for enhanced ferroelectric and piezoelectric performance on the nanoscale, however, their synthesis at the wafer scale using industrially compatible processes is challenging. In order to advance the nanostructure-based electronics, it is imperative to develop a silicon-compatible growth technique yielding high volumetric density and an ordered arrangement. Here, a major breakthrough is provided in addressing this need and ordered and close-packed single crystalline ferroelectric nanorod arrays, of composition PbZr 0.52 Ti 0.48 O 3 (PZT), grown on commercial grade 3 in. silicon wafer are demonstrated. PZT nanorods exhibit enhanced piezoelectric and ferroelectric performance compared to thin films of similar dimensions. Sandwich structured architecture utilizing 1D PZT nanorod arrays and 2D reduced graphene oxide thin film electrodes is fabricated to provide electrical connection. Combined, these results offer a clear pathway toward integration of ferroelectric nanodevices with commercial silicon electronics.

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Vertically aligned epitaxial KNbO3 nanorod array for piezoelectric energy harvester and second harmonic generator

Cited by 31 publications

References 30 publications

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

Wafer‐Scale Single‐Crystalline Ferroelectric Perovskite Nanorod Arrays

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