High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

Jegenyés, Nikoletta; Morassi, Martina; Chrétien, Pascal; Travers, Laurent; Lu, Lu; Julien, F. H.; Tchernycheva, Maria; Houzé, Frédéric; Gogneau, N.

doi:10.3390/nano8060367

Cited by 15 publications

(16 citation statements)

References 53 publications

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“…This is in good agreement with theoretical predictions [28], as well as with the previously reported results demonstrating that the piezoelectric charge of a nanowire is proportionally induced to the length of the nanowire [29]. It was proven that at higher nanowire lengths, the flexibility of the nanostructured element is greater, so it is easier to achieve the generation of a higher output voltage, because of the greater deflection of the nanowires [30]. Structures with nanowire lengths of 1.3 µm showed 0.4 mV/g, nanowire lengths of 6.3 µm showed 1.7 mV/g, and nanowires lengths of 10 µm showed 2.3 mV/g (aspect ratio varies between 5 and 40).…”

Section: Resultssupporting

confidence: 92%

Sensing Ability of Ferroelectric Oxide Nanowires Grown in Templates of Nanopores

et al. 2020

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Nanowires of ferroelectric potassium niobate were grown by filling nanoporous templates of both side opened anodic aluminum oxide (AAO) through radiofrequency vacuum sputtering for multisensor fabrication. The precise geometrical ordering of the AAO matrix led to well defined single axis oriented wire-shaped material inside the pores. The sensing abilities of the samples were studied and analyzed in terms of piezoelectric and pyroelectric response and the results were compared for different length of the nanopores (nanotubes)—1.3 µm, 6.3 µm and 10 µm. Based on scanning electronic microscopy, elemental and microstructural analyses, as well as electrical measurements at bending and heating, the overall sensing performance of the devices was estimated. It was found that the produced membrane type elements, consisting potassium niobate grown in AAO template exhibited excellent piezoelectric response due to the increased specific area as compared to non-structured films, and could be further enhanced with the nanowires length. The piezoelectric voltage increased linearly with 16 mV per micrometer of nanowire’s length. At the same time the pyroelectric voltage was found to be less sensitive to the nanowires length, changing its value at 400 nV/µm. This paper provides a simple and low-cost approach for nanostructuring ferroelectric oxides with multisensing application, and serves as a base for further optimization of template based nanostructured devices.

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Section: Resultssupporting

confidence: 92%

Sensing Ability of Ferroelectric Oxide Nanowires Grown in Templates of Nanopores

et al. 2020

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“…Semiconductor nanowires offer the unique opportunity to realize coherent axial heterostructures which associate materials having vastly different lattice parameters [1][2][3] or crystalline structures [4,5]. In addition, the nanowire geometry can be adjusted to finely engineer its photonic and electronic properties [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Full characterization and modeling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

Beznasyuk

Stepanov

Verheijen

et al. 2020

Phys. Rev. Materials

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“…[1][2][3][4][5][6] Hence, researchers are exploring alternative materials for application in energy harvesting devices. Ferroelectric materials, which have been investigated intensively, suffer from low output power due to their high resistance.…”

Section: Introductionmentioning

confidence: 99%

“…Energy harvesting gets further significance with the advent of Internet of Things (IoT) devices, which need to harvest their own energy. Ferroelectric materials, which have been investigated intensively, suffer from low output power due to their high resistance . Hence, researchers are exploring alternative materials for application in energy harvesting devices.…”

Section: Introductionmentioning

confidence: 99%

Stress‐Induced Domain Wall Motion in FeCo‐Based Magnetic Microwires for Realization of Energy Harvesting

Bhatti

Liu

et al. 2018

Adv Elect Materials

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domains store information states and the information is read by moving the domains. [11,[14][15][16][17][18] Domain wall movement can also be explored for energy harvesting by converting stress into changes in magnetization and thus into electrical voltage. In the energy harvesting investigations reported so far, domain wall motion is accomplished only in multiferroic structures, where stress was induced by providing an electrical energy to the ferroelectric layers. [19][20][21][22][23][24][25] Employing significant amounts of electrical energy, however, defeats the purpose of energy harvesting. Moreover, ceramic ferroelectric layers, like PZT, require high-temperature deposition or postdeposition annealing (>400 °C) under severe oxidation conditions, which inevitably degrade the magnetic properties. [26] Therefore, stress-induced motion of domain walls in pure magnetic films without the use of ferroelectric layers and a supplied energy is a better approach for self-power generation. In the past, amorphous magnetic materials have been studied for domain wall dynamics under stress. [27,28] Pickup of voltage using a pickup coil was used for sensing the domain wall motion. [29][30][31] An analytical model for stress-induced transverse domain wall movement in ferromagnetic nanostripe has also been proposed. [32] In this article, we report that the domain walls in magnetic microwires made of crystalline ferromagnetic films can be moved by merely applying mechanical stress. The key recipes for the successful observation of such domain wall movement are: (i) a magnetic stack of CoNi/Fe 65 Co 35 /CoNi with which we have controlled the microstructures, (ii) an induced magnetic easy axis that we set by the direction of fringing magnetic field during the deposition (see the Supporting Information), and (iii) the use of flexible substrates with which we could enhance the stress delivered to the device from ambient sources, which is otherwise impossible with rigid substrates like Si. With a prototype device, we have shown in this article, the motion of domain walls under applied stress and have harvested energy.

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High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

Cited by 15 publications

References 53 publications

Sensing Ability of Ferroelectric Oxide Nanowires Grown in Templates of Nanopores

Sensing Ability of Ferroelectric Oxide Nanowires Grown in Templates of Nanopores

Full characterization and modeling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

Stress‐Induced Domain Wall Motion in FeCo‐Based Magnetic Microwires for Realization of Energy Harvesting

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