Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga₂O₃

Abstract

Wide bandgap semiconductors such as gallium oxide (Ga2O3) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal Ga2O3 substrates can be routinely grown from melt along...

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures

“…Our research findings align consistently with those of Wei et al, who demonstrated the outstanding broadband absorption capability of the WS 2 /Ga 2 O 3 heterostructure . In 2023, Leblanc et al built several types of TMDs/Ga 2 O 3 heterostructure devices and ultimately achieved a rectification ratio up to 10 6 in the WS 2 /Ga 2 O 3 heterostructure, showing the great potential of TMDs/Ga 2 O 3 heterostructures to be applied in electronic and optoelectronic devices . Furthermore, it was proven that for broadband photodetection, radiation recombination in TMDs stimulated directly by Ga 2 O 3 by providing electrons through the built-in electric field can not only decrease the series resistance ( R ) but also decrease the junction capacitance ( C ) of the photodetectors by reducing the depletion width.…”

“…23 In 2023, Leblanc et al built several types of TMDs/Ga 2 O 3 heterostructure devices and ultimately achieved a rectification ratio up to 10 6 in the WS 2 /Ga 2 O 3 heterostructure, showing the great potential of TMDs/Ga 2 O 3 heterostructures to be applied in electronic and optoelectronic devices. 25 Furthermore, it was heterostructures was apparently improved in the whole wavelength range, especially within the visible range. The Raman spectra showed that the electron density in the TMD layers was all decreased after being transferred onto Ga 2 O 3 films, which was supported by the XPS results.…”

“…20 Recently, in 2023, Leblanc et al reported a WS 2 /Ga 2 O 3 heterostructure with a rectification ratio up to 10 6 . 25 Despite significant progress being made in device development, the band alignment and interlayer carrier transfer mechanism of a variety of TMDs/Ga 2 O 3 heterostructures still needs in-depth exploration, particularly with regard to the direct observation of their broadband absorption spectra through experimental methods. 26−30 Besides, β-Ga 2 O 3 single-crystal flakes also suffer from a limited optically sensitive area and a high-temperature (over 1600 °C) preparation process, which seriously hamper its widespread applications in photodetection.…”

“…The same year, Choi et al constructed a highly crystalline p-TMDs/n-β-Ga 2 O 3 heterostructure, where high-speed photodetection was realized in the p-TMD channel (the optical-switching cutoff frequencies in the visible red and NIR regions were ≈16 and 29 kHz, respectively) . Recently, in 2023, Leblanc et al reported a WS 2 /Ga 2 O 3 heterostructure with a rectification ratio up to 10 6 . Despite significant progress being made in device development, the band alignment and interlayer carrier transfer mechanism of a variety of TMDs/Ga 2 O 3 heterostructures still needs in-depth exploration, particularly with regard to the direct observation of their broadband absorption spectra through experimental methods. − …”

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

“…Saturated output currents were observed with a V th of −5.1 V, and a three-terminal breakdown voltage of 144 V was obtained. Leblanc et al [135] demonstrated p-n heterojunctions using p-WSe 2 , WS 2 , and BP on β-Ga 2 O 3 , and the fabricated device structure is depicted in Figure 15g. Their study focused on optimizing 2D/3D vertical diodes on β-Ga 2 O 3 by considering three key factors, including the β-Ga 2 O 3 crystal orientation, the choice of 2D material, and the type of metal contact.…”