The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achievement of high-quality edge contacts. Here we present a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, PtTe2. The use of PtTe2 as an epitaxial template enables the lateral growth of monolayer MoS2 to achieve a PtTe2-MoS2 MSJ with the thinnest possible, seamless atomic interface. The synthesized lateral heterojunction enables the reduced dimensions of Schottky barriers and enhanced carrier injection compared to counterparts composed of a vertical 3D metal contact. Furthermore, facile position-selected growth of PtTe2-MoS2 MSJ arrays using conventional lithography can facilitate the design of device layouts with high processability, while providing low contact resistivity and ultrashort transfer length on wafer scales.
Wide bandgap semiconductors such as gallium oxide (Ga2O3) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal Ga2O3 substrates can be routinely grown from melt along...
Reliability and voltage quality in distribution networks have been achieved via a combination of transformer power rating satisfaction and voltage management asset control. To maintain reliable operation under this paradigm, however, future grids with deep DER penetrations would require costly equipment upgrades. These upgrades can be mitigated via judicious coordination of DER operation. Earlier work has assumed a hierarchical control architecture in which a global controller (GC) uses detailed power injection and DER data and knowledge of DER owners' objectives to determine setpoints that local controllers should follow in order to achieve reliable and cost effective grid operation. Having such detailed data and assuming knowledge of DER owners' objectives, however, are often not desirable or possible. In an earlier work, a 2layer DER coordination architecture was shown to achieve close to optimal performance despite infrequent (e.g., once per day) communication to a global controller. Motivated by this work, this paper proposes a day-ahead coordination scheme that uses forecasted power profile ranges to generate day-ahead dynamic power rating bounds at each transformer. Novel features of this scheme include: (i) the GC knows only past node power injection data and does not impose or know DER owner objectives, (ii) we use bounds that ensure reliable operation to guide the local controllers rather than setpoint tracking, and (iii) we consider electric vehicle (EV) charging in addition to storage. Simulations using the IEEE 123-bus network show that with random placements of 50% solar, 50% EVs and only 10% storage penetrations, the uncoordinated approach incurs rating violations at nearly all 86 transformers and results in 10 times higher voltage deviation, while our approach incurs only 12 rating violations and maintains almost the same voltage deviations as before the addition of solar and EVs.
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