Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

Oi, Nobutaka; Inaba, Masafumi; Okubo, Susumu; Tsuyuzaki, Ikuto; Kageura, Taisuke; Onoda, Shinobu; Hiraiwa, Atsushi; Kawarada, Hiroshi

doi:10.1038/s41598-018-28837-5

Cited by 45 publications

(12 citation statements)

References 25 publications

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“…In Fig. 4, the electrical characteristics are benchmarked against other HTDTs in the literature, based on monocrystalline diamond [5], [12], [21], [22], polycrystalline diamond [4], [23], and polycrystalline diamond on SiC [6]. This work represents the first HTDT on GaN-on-Si substrates, demonstrating similar high power device figure of merit (BFOM = 2.5 MW/cm 2 ) compared with other HTDTs on polycrystalline and even some on monocrystalline diamond.…”

Section: Resultsmentioning

confidence: 77%

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Soleimanzadeh

Naamoun²,

Khadar

et al. 2020

IEEE Electron Device Lett.

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In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate highperformance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization of the microwave-plasma chemical-vapor-deposition of diamond on GaN, the polycrystalline layer was hydrogenated to form a 2D hole-gas at the surface, acting as p-channel. Relying on a rather simple fabrication process, these devices exhibited excellent electrical and thermal performances with on-off ratio of 10 9 , breakdown voltage of 400 V, specific on-resistance of 84 mΩ•cm 2 , and thermal conductivities higher than 900 W/m•K. The presented hetero-integration technology provides a promising platform for future complementary logic operations, gate drivers, complementary power switch applications such as integrated power inverters and converters, simultaneously serving as a very efficient thermal management solution in high power density applications.

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Section: Resultsmentioning

confidence: 77%

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Soleimanzadeh

Naamoun²,

Khadar

et al. 2020

IEEE Electron Device Lett.

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“…Since there are no interspaces between the source/drain and gate electrodes of the T-type H-diamond MOSFET, its on-resistance was much lower than that of the planar-type MOSFET, leading to a high |I DSmax | of 224.1 mA mm −1 at an L G of 4.0 µm [6]. Holes in the vertical-type H-diamond MOSFET can also transfer at both the lateral and planar sides; its |I DSmax | was 234.0 mA mm −1 [28]. Our previous triple-gate MOSFET showed an |I DSmax | of 242.0 mA mm −1 (normalized by the W G ) at an L G of 0.5 µm with a ratio of 0.57 between the height of the lateral side and the width of the planar side for each fin [13].…”

Section: Resultsmentioning

confidence: 99%

High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

Liu

Ohsato

et al. 2019

IEEE J. Electron Devices Soc.

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Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxidesemiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate. The ratio between the height of the lateral side and the width of planar side for each fin of the triple-gate MOSFETs was as high as 1.45. The leakage current densities at an electrical field strength of −1.5 MV cm −1 for both the planar-type and triple-gate fin-type MOSFETs were around 10 −6 A cm −2 . Both MOSFETs operated well with on/off ratios as high as 10 10 . The current output maximum normalized by the gate width of the triple-gate H-diamond MOSFET was −271.3 mA mm −1 , almost double that of the planar-type MOSFET. The results of this paper are expected to pave the way towards the fabrication of high current out and downscaled H-diamond MOSFETs.

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“…Many studies have been devoted to the development of hydrogenated diamond (H-diamond) MOSFETs because the H-diamond surface can accumulate two-dimensional hole gases [14][15][16][17][18][19][20][21][22][23]. Recently, Kawarada's group reported the first vertical H-diamond MOS-FETs [24,25]. In addition, Pernot's group proposed the deep depletion concept and concentrated on the oxygen-terminated diamond (O-diamond) MOSFETs [26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Inversion-type p-channel diamond MOSFET issues

Zhang

Matsumoto

Yamasaki

et al. 2021

Journal of Materials Research

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This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration (NP) of the n-type body on field-effect mobility (μFE) and interface state density (Dit) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low μFE and one main reason is high Dit. To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low C–V method and the conductance method, providing further insights into the trap properties at Al2O3/diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs. Graphic abstract

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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

Cited by 45 publications

References 25 publications

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

Inversion-type p-channel diamond MOSFET issues

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