High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

Abstract

Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxidesemiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate. The ratio between the height of the lateral side and the width of planar side for each fin of the triple-gate MOSFETs was as high as 1.45. The leakage current densities at an electrical field strength of −1.5 MV cm −1 for both the planar-type and triple-gate fin-type MOSFETs were around 10 −6 A cm −2 . Both MOSFETs operated well with on/off ratios as high as 10 10 . The current output maximum normalized by the gate width of the triple-gate H-diamond MOSFET was −271.3 mA mm −1 , almost double that of the planar-type MOSFET. The results of this paper are expected to pave the way towards the fabrication of high current out and downscaled H-diamond MOSFETs.

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

“…Currently, the most commonly used boron-doping method involves introducing borane or trimethyl boron (TMB) during the MPCVD process. By adjusting the ratio of boron-containing gases to carbon-containing gases, different boron doping concentrations can be achieved, effectively controlling the electrical conductivity of diamond (17)(18)(19). MPCVD provides a highly repeatable and uniform boron-doped homoepitaxial growth process for diamond.…”

Normally-OFF Diamond Reverse Blocking MESFET

“…This is due to the unique properties of diamond as a wide band-gap (5.5eV) semiconductor. The majority of Diamond field-effect transistors (FETs) fabricated to-date use a 2D hole gas that emerges when an H-terminated diamond surface comes into contact with a range of adsorbates and/or selected metal oxides [1][2][3][4][5][6][7][8]. However, this unconventional manner of creating a ptype region in a semiconductor suffers from instability and reproducibility problems [9] and low operational mobility issues [10][11], although recent progress with the use of metaloxide passivation/gate structures have considerably reduced these problems.…”