Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density

Abstract

A high-speed transistor operation is expected from using an undoped channel region. We propose a vertical InGaAs-channel metal-insulatorsemiconductor field effect transistor (MISFET) with an ultra-narrow mesa structure, an undoped channel, and a heterostructure launcher. According to a Monte Carlo simulation, a cutoff frequency of 1.5 THz is expected when a 20-nm-wide mesa structure, a 60-nm-long channel, and a 5 MA/cm 2 drain current density are achieved. We fabricated an ultra-narrow mesa structure by using selective undercut etching. In the fabricated device, the channel mesa was 15 nm wide, and the observed drain current density was 0.95 A/mm. Because the channel mesa width was 15 nm, the drain current density per unit area was 6.3 MA/cm 2 . A high current density was achieved for a short charging time. By comparing the drain current density of the 60-nm-long channel device with that of a 100-nm-long channel device, we inferred that quasi-ballistic transportation can be achieved in our devices. #

High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa

“…Improvement in the performance of Si-CMOS by scaling is currently close to its physical limit. To surpass this physical limit, we have proposed a vertical InGaAs channel metal-insulator-semiconductor field-effect transistor (MISFET) with an InP/InGaAs heterostructure launcher and an undoped channel [1][2][3][4].…”

“…[1][2][3][4][5][6][7] To surpass these physical limits, we have proposed a vertical InGaAs channel metal-insulator-semiconductor field-effect transistor (MISFET) with an InP/InGaAs heterostructure launcher and an undoped channel. [8][9][10][11][12][13][14][15][16][17][18][19][20] Hot electrons propagate in the undoped channel in the vertical MISFET, and high-speed operation with a high current density is expected. 11,21) We had previously fabricated such a device with a 15-nmwide channel mesa, and observed a 7 MA/cm 2 drain current density.…”

Reduction of Output Conductance in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region

“…[6][7][8][9][10][11] Therefore, a vertical InGaAs channel metal-insulator-semiconductor field-effect transistor (MISFET) with an InP/InGaAs heterostructure launcher and an undoped channel was proposed. [6][7][8][9][10][12][13][14][15] To realize high-speed operation of the proposed device, the device was fabricated as shown in Fig. 1(a).…”