Vertical GaN based Light Emitting Diodes on Metal Alloy Substrate for Solid State Lighting Application

Doan, Thi Hai Yen; Chen, Chu; Chen, C.; Liu, W.; Chu, Jhih‐Wei; Yeh, Jui-Hung; Chen, H.; Fan, Feng-Hsu; Tran, C. A.

doi:10.1117/12.673987

Cited by 8 publications

(6 citation statements)

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“…In addition, the use of Cu substrate not only simplifies the electrode preparation, but also can suppress the current-crowding effect, because the vertical configuration of anode and cathode can yield uniform current spreading [see the inset of Figs. 3(b) and 3(c)] [15,16]. Now, let us briefly discuss the mode and formation mechanism of ZnO lasing.…”

Section: Resultsmentioning

confidence: 99%

“…Though these substrates have an epitaxial relationship with ZnO, their low thermal conductivity and high transparency bring some negative effects, such as poor heat dissipation and light loss in the direction of substrates. These problems can be mitigated by the use of metal substrates [14][15][16][17][18][19]. However, the device fabrication on metal substrates is very difficult because of thermal mismatch and lattice mismatch.…”

Section: Introductionmentioning

confidence: 99%

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ZnO ultraviolet random laser diode on metal copper substrate

Liu¹,

Xu²,

Sun³

et al. 2014

Opt. Express

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Direct fabrication of light emitting devices on metal substrates is highly desirable due to their advantages of high thermal conductivity and light reflection. In this work, we demonstrated a feasibility of directly fabricating ZnO-based ultraviolet laser diodes on metal substrates. By introducing an anti-oxidation buffer layer, Au/MgO/ZnO metal-insulator-semiconductor heterojunction devices are successfully fabricated on the copper substrate. Electrically pumped ultraviolet random lasing was achieved from ZnO active layer. The use of copper substrate offers some merits, including lower thermal effect and higher stability of emission wavelength.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

ZnO ultraviolet random laser diode on metal copper substrate

Liu¹,

Xu²,

Sun³

et al. 2014

Opt. Express

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“…Also, the reduced thermal resistance (Rth) of GaN-based VLEDs can lead to an enhanced heat dissipation ability. Doan et al demonstrated that the Rth of GaN-based LEDs could be reduced by 55% employing a vertical configuration [38]. A vertical path of current injection can result in a more uniform current distribution, avoiding the localized overheating.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

Zhang

Rong

et al. 2019

Micromachines

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β-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on β-Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on β-Ga2O3. In this review, with the perspective from materials to devices, we first describe the basic properties, growth method, as well as doping of β-Ga2O3, then introduce in detail the progress in growth of GaN on (1 0 0) and (−2 0 1) β-Ga2O3, followed by the epitaxy of AlGaN on gallium oxide. Finally, the advances in fabrication and performance of vertical structure LED (VLED) are presented.

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“…The second one is the serious current crowding phenomenon due to the lateral current conduction necessitated by insulating sapphire 2 . Therefore, GaN vertical LED on metal alloy substrate (VLEDMS) was proposed and implemented to overcome the fundamental barriers 3,4 . In this study, a new top surface engineering for efficient light extraction is employed to VLEDMS to improve the power conversion efficiency further.…”

Section: Introductionmentioning

confidence: 99%

Highly reliable and bright GaN vertical LED on metal alloy substrate using corrugated pyramid shaped surface technology

Chu¹,

Chu²,

Cheng³

et al. 2008

SPIE Proceedings

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GaN vertical LED on metal alloy substrate (VLEDMS) is a desirable technology suitable for solid-state lighting application from the viewpoint of reliability and lighting efficacy performance. A new top surface engineering technique for efficient light extraction is employed to VLEDMS to improve the power conversion efficiency further. Corrugated pyramid shaped (CPS) surfaces are developed and formed on VLEDMS. By using such structure, VLEDMS exhibit a great enhancement of around 20% in light output power, and a high efficiency of over 100 lumens per watt can also be achieved by white LEDs. In the life test, the light output power of VLEDMS chips drops only by less than 10% within 3,000 hours, and the chips can also endure over 1000 cycles of thermal shock without significant variations in electrooptical performance. Therefore, the highly reliable and bright VLEDMS using CPS surface engineering technique is very suitable for the solid-state lighting application.

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Vertical GaN based Light Emitting Diodes on Metal Alloy Substrate for Solid State Lighting Application

Cited by 8 publications

References 0 publications

ZnO ultraviolet random laser diode on metal copper substrate

ZnO ultraviolet random laser diode on metal copper substrate

Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

Highly reliable and bright GaN vertical LED on metal alloy substrate using corrugated pyramid shaped surface technology

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