Vertical charge imbalance effect on 600 V-class trench-filling superjunction power MOSFETs

Tamaki, T.; Nakazawa, Y.; Kanai, H.; Abiko, Yukiaki; Ikegami, Y.; Ishikawa, M.; Wakimoto, E; Yasuda, Takumi; Eguchi, S.

doi:10.1109/ispsd.2011.5890852

Cited by 39 publications

(10 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…1(a). Since the first SJ power MOSFET was demonstrated experimentally in [3], many design criteria [4]- [8] and engineering efforts [9], [10] have been proposed to optimize the tradeoff between BV and R on of the SJ structure. It is pointed out in [5] and [6] that in an SJ structure with uniform doping concentration in each column, the avalanche breakdown happens at peak electric field points A and B' first, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

An Improved Superjunction Structure With Variation Vertical Doping Profile

Lin

Huang

Chen

2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

An analysis of an improved superjunction structure with variation vertical doping profile (VVD-SJ) is presented in this brief. It features a better tradeoff between breakdown voltage (BV) and specific ON-resistance (R on ) than the prior art, due to a higher average doping concentration in columns. A simple 2-D electric field model of the VVD-SJ structure is derived based on charge superposition principle. Optimized results show that the specific ON-resistance of the VVD-SJ structure is reduced by ∼10%, compared with the SJ one under the same BV and aspect ratio. The mainstream multiple epitaxial growth and implantation technology is suitable to fabricate the VVD-SJ power MOSFET without extra process cost. Index Terms-Breakdown voltage (BV), electric field model, specific ON-resistance, variation vertical doping superjunction (VVD-SJ).Zhi Lin is currently pursuing the Ph.D. degree with the State

show abstract

Section: Introductionmentioning

confidence: 99%

An Improved Superjunction Structure With Variation Vertical Doping Profile

Lin

Huang

Chen

2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…Fig. 6b illustrates the simulated R on,sp −BV performance of step HK-MOSFET compared with the reported results [9][10][11]. R on, sp of step HK-MOSFET is lower by 15-20% than that of the conventional HK-MOSFET and is close to the SJ MOSFET at the a of 4 μm under the optimised conditions.…”

Section: Resultsmentioning

confidence: 81%

Vertical double diffused MOSFET with step HK insulator improving electric field modulation

Duan

Xie

Shi

et al. 2019

Micro & Nano Letters

View full text Add to dashboard Cite

A novel step high-k metal-oxide-semiconductor field-effect transistor (step HK-MOSFET) is designed with the step high-k insulator based on the HK-MOSFET concept for the first time. In the off-state, the step HK insulator enhances the lateral field component in the drift region due to the new electric field peak, which increases the depletion of the drift region and leading to the low specific on-resistance (R on, sp) of step HK-MOSFET compared with the conventional HK-MOSFET. Meanwhile, the various thicknesses of the HK insulator modulates the vertical electric field distribution in the drift region, which increases the breakdown voltage (BV) of step HK-MOSFET compared with the conventional vertical double diffused MOSFET and HK-MOSFET. The results show that the simulated BV of step HK-MOSFET is increased from 639 V of the conventional HK-MOSFET to 736 V with the same drift region length of 42 μm or decreased the requirement of permittivity for the HK region to 120 ɛ 0 from 230 ɛ 0 with the same BV of 600 V.

show abstract

“…5 shows the low R on,sp of 17.4 mΩ•cm 2 for SiC/Si VDMOS with the BV of 578 V compared with the R on, sp of 41.01 mΩ•cm 2 with the BV of 226 V for Si VDMOS by using the numerical simulation ISE [15]. The reported results [10,16,17] have also been shown in Fig. 5.…”

Section: Resultsmentioning

confidence: 95%

SiC/Si heterojunction VDMOS breaking silicon limit by breakdown point transfer technology

Duan

Zhao

et al. 2018

Micro & Nano Letters

View full text Add to dashboard Cite

An innovative semiconductor power vertical double-diffused MOSFET (VDMOS) is proposed for the first time with the SiC/Si heterojunction at the P-base and N-drift region (called for SiC/Si VDMOS), which improves the trade-off between the breakdown voltage (BV) and specific on-resistance (R on,sp). The 'soft' Si material has been combined with the 'hard' SiC material to play their own advantages for SiC/Si VDMOS. The Si has been formed above the 6H-SiC substrate to make up the channel and source electrode, and the 6H-SiC is underneath the P-base to form the SiC/Si heterojunction. The novel terminal technology of breakdown point transfer has been advanced for the first time and applied to SiC/Si VDMOS, which transfers the breakdown point of SiC/Si VDMOS and improve the BV compared with Si VDMOS. The simulated results have been shown that the optimised BV of proposed SiC/Si VDMOS is increased from 226 to 578 V compared with the conventional Si VDMOS with the same drift region length, which is because the breakdown point is transferred from the higher electric field area with the maximum curvature radius to the low electric field area. The simulated R on,sp of SiC/Si VDMOS is 17.4 mΩ•cm 2 with the BV of 578 V, which is lower than that of 41.01 mΩ•cm 2 with the BV of 226V in Si VDMOS. The silicon limit relationship has been broken for SiC/Si VDMOS.

show abstract

Vertical charge imbalance effect on 600 V-class trench-filling superjunction power MOSFETs

Cited by 39 publications

References 4 publications

An Improved Superjunction Structure With Variation Vertical Doping Profile

An Improved Superjunction Structure With Variation Vertical Doping Profile

Vertical double diffused MOSFET with step HK insulator improving electric field modulation

SiC/Si heterojunction VDMOS breaking silicon limit by breakdown point transfer technology

Contact Info

Product

Resources

About