Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono‐, Di‐, and Tri‐Chalcogenide Nanosheets

Abstract

Emerging 2D metal chalcogenides present excellent performance for electronic and optoelectronic applications. In contrast to graphene and other 2D materials, 2D metal chalcogenides possess intrinsic bandgaps, versatile band structures, and superior atmospheric stability. The many categories of 2D metal chalcogenides ensure that they can be applied to various practical scenarios. 2D metal monochalcogenides, dichalcogenides, and trichalcogenides are the three main categories of these materials. They have distinct crystal structures resulting in different characteristics. Some basic device characteristics, such as the charge carrier characteristics, scattering mechanisms, interfacial contacts, and band alignments of heterojunctions, are vital factors for practical device applications that ensure that the desired properties can be achieved. Various electronic, optoelectronic, and photonic applications based on 2D metal chalcogenides have been extensively investigated. 2D metal chalcogenides are considered as competitive candidates for future electronic and optoelectronic applications.is advantageous for reducing the destruction from the surrounding environment during processing and storage and can effectively prolong the practical lifetime of materials. 2D metal chalcogenides have been extensively investigated for various applications, including electronics, optoelectronics, valleytronics, spintronics, superconductivity, thermoelectricity, and electrochemistry. [1b,5,9] 2D metal chalcogenides possess rich band structures with various bandgaps, which are a pivotal issue of modern electronic and optoelectronic applications. Some 2D metal chalcogenides with special quantum characteristics provide a versatile platform for investigating novel electronic and optoelectronic applications, such as the valleytronics applications of group VIB dichalcogenides. [10] In this review, we provide a comprehensive introduction to electronic, optoelectronic, and photonic applications for all 2D metal chalcogenides, including 2D metal mono-, di-, and tri-chalcogenides. Their different characteristics arising from the diverse crystal structures determine the potential applications in different fields. Some basic device characteristics, such as the charge carrier characteristics, scattering mechanisms, interfacial contacts, and band alignments of heterojunctions, are vital factors for optimizing the performance in practical applications. A bottomto-top overview based on recent studies of 2D metal chalcogenides, from the crystal structures and device characteristics to applications, is provided in the following sections.

Recent advances in 2D/nanostructured metal sulfide-based gas sensors: mechanisms, applications, and perspectives

“…40 Metal sulde is a kind of combination of sulfur anions and metal/ semi-metal cations in the form of M x S y (x : y ¼ 1 : 1, 1 : 2, 2 : 1, 3 : 4). 41 As shown in Fig. 3, metal monosuldes mostly correspond to group VIII, IB, IIB, IIIA, and IVA metals.…”

In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects

“…Group IV transition metal trichalcogenides MX 3 are composed of transition metals M belonging to either group IVB (Ti, Zr, Hf) or group VB (Nb, Ta) and chalcogen atoms, X, from group VIA (S, Se, Te). 110,111 The MX 3 crystal structures (see Fig. 3) can be described as the stacking of individual chain units with the same orientation.…”

“…For low dimensional and exible photodetectors, 2D layered materials should exhibit high responsivity, large detectivity, and fast response time. 111,[220][221][222] Unlike graphene, many other 2D layered materials have a band gap and large absorption coefficient, which are benecent for high performance photodetectors. In addition, polarization-sensitive photodetectors based on low-symmetry layered materials are also desirable in optical communication, remote sensing, and optical data storage.…”

Optoelectronic and photonic devices based on transition metal dichalcogenides

“…Enhanced light-matter interaction even at monolayer thickness along with a direct bandgap and mechanical flexibility gives clear advantage over silicon (Si) technology [6,26]. Optoelectronic devices such as photodetectors, photovoltaics, light-emitting devices and optical modulators have been demonstrated using TMDCs across a wide range of device architectures and measurement methodologies [4,27,28]. Figure 1 gives a picture of published reports on TMDCs in the field of optoelectronics and photonics.…”