2017 6th International Conference on Modern Circuits and Systems Technologies (MOCAST) 2017
DOI: 10.1109/mocast.2017.7937645
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Verilog-A modeling of Organic Electrochemical Transistors

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Cited by 7 publications
(8 citation statements)
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“…Finally, on a phenomenological level, the development of SPICE models will greatly boost the design of OECT-based circuits. 165,166 In terms of materials for OECTs, although some examples of polymers with performance higher than that of PEDOT:PSS have been reported, we are still at the very early stages of development of structure vs. properties relationships that can guide synthesis. As film structure changes upon immersion and operation in an electrolyte environment, the development and utilization of in situ and operando measurements that combine structural, spectroscopic, and electrical properties are particularly important.…”
Section: Discussionmentioning
confidence: 99%
“…Finally, on a phenomenological level, the development of SPICE models will greatly boost the design of OECT-based circuits. 165,166 In terms of materials for OECTs, although some examples of polymers with performance higher than that of PEDOT:PSS have been reported, we are still at the very early stages of development of structure vs. properties relationships that can guide synthesis. As film structure changes upon immersion and operation in an electrolyte environment, the development and utilization of in situ and operando measurements that combine structural, spectroscopic, and electrical properties are particularly important.…”
Section: Discussionmentioning
confidence: 99%
“…Therefore, there is a design trade-off between 𝑔𝑔 m and the maximum speed of the transistors when changing the channel thickness [3,16]. Moreover, as the thickness increases, the threshold voltage moves toward more negative values and the saturation region in the 𝐼𝐼 D − 𝑉𝑉 DS plot fades away [11].…”
Section: B Oect Dependence On Parameter Variationmentioning
confidence: 99%
“…While the available analytic models are useful for assessing the performance of OECTs, they lack sufficient accuracy due to the currently limited understanding of the physics of these devices [9]. The available numerical models, on the other hand, might have high complexity [11] or precision issues [12].…”
Section: Introductionmentioning
confidence: 99%
“…Atualmente existem inúmeros modelos teóricos que descrevem a resposta elétrica do dispositivo, 26,28,35,[61][62][63][64][65][66][67][68] tanto em medidas de estado estacionário, curvas de saída, e medidas de estado transiente (usualmente medidas pulsadas). Colucci e coautores 20 classificam os modelos em quatro categorias: modelos estacionários baseados no trabalho de Bernards-Malliaras (B-M), 26,63 modelos de circuito equivalente, 35 modelos híbridos entre o B-M e circuito equivalente 69 e modelos contendo difusão iônica.…”
Section: Transistor Eletroquímico Orgânicounclassified