Variational studies of two- and three-dimensional<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="italic">D</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">−</mml:mi></mml:mrow></mml:msup></mml:mrow></mml:math>centers in magnetic fields

Larsen, David M.; McCann, S. Y.

doi:10.1103/physrevb.46.3966

Cited by 70 publications

(42 citation statements)

References 19 publications

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“…On the other hand, impurities in semiconductors influence both transport and optical properties so that topics like confined D -centers in low-dimensional space have been extensively investigated. Since the existence of the D -centers in center-doped GaAs/Al x Ga 1-x As multiple quantum wells (QWs) was first reported by Huant et al [3] in 1990, the D -centers in semiconductor nanostructures have been investigated from the experimental [4][5][6] and theoretical [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] points of view.…”

Section: Introduction the Dmentioning

confidence: 99%

Investigation of D^– centers confined by spherical quantum dots

Xie

2008

Physica Status Solidi (b)

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A negative donor center D– in a spherical Gaussian potential quantum dot is studied. The calculations have been performed by means of the exact diagonalization of the Hamiltonian matrix within the effective‐mass approximation. The dot‐radius and confinement‐height dependences of the binding energies of the D– center are obtained. We find that the stability of the D– center strongly depends on the dot radius and the depth of the confining potential. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introduction the Dmentioning

confidence: 99%

Investigation of D^– centers confined by spherical quantum dots

Xie

2008

Physica Status Solidi (b)

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“…But it is not so good an approximation for small ␥ and even if we take N mix ϭ7. For example, for the strictly two-dimensional model (ϭ0), calculations based on the variational method of Larsen and McCann 18 give more accurate energies of D Ϫ states with lower angular momentum than ours. The differences between the dotted lines and the other lines represent the effects of the higher Landau levels.…”

Section: Resultsmentioning

confidence: 69%

Change of symmetry of the barrierD−ground state in finite magnetic fields

Kanamaru

Tokuda

1997

Phys. Rev. B

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The states of the barrier D Ϫ center which consists of a positive ion located on the z axis at a distance from the x-y plane and two electrons in the same plane bound by the ion are investigated based on a direct diagonalization method in finite and relatively high magnetic fields. The energies of the barrier D Ϫ states, the binding energies for the barrier D Ϫ states, and the expectation values of both the distance of the electron from the origin and distance between two electrons are obtained as functions of the applied magnetic field strength ␥ perpendicular to the x-y plane and the distance between the positive ion and the x-y plane. The effects of the higher Landau levels become small as ␥ and increase. The change of symmetry of the barrier D Ϫ ground state is possible in finite magnetic fields. Both the distance of the electron from the origin and distance between two electrons vary discontinuously with the changes of symmetry of the barrier D Ϫ ground states. Our calculations indicate that the phase transitions of the barrier D Ϫ ground states can be observed in real systems.

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“…When the effective mass is isotropic, the magnetic-field dependence of the negative donor state has also been studied extensively. [4][5][6][7] In the presence of the magnetic field, it has been shown that there exist an infinite number of bound states for a D − ion, 8 while only one bound state exists in the absence of a magnetic field. Hujaj and Schmelcher 5 studied the lowest bound states of the hydrogen negative ions in the broad magnetic field regime.…”

Section: Introductionmentioning

confidence: 99%

Negative donors in bulk Si andSi/SiO2quantum wells in a magnetic field

et al. 2009

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The spin-singlet ground states of a D − ion in bulk Si and Si/ SiO 2 quantum wells have been investigated in the presence of a magnetic field, using a diffusion quantum Monte Carlo method. By neglecting the central-cell correction, the negative donor state can be assigned by the valley indexes of two trapped electrons. In the bulk Si, the ground-state energies of negative donors of both the intervalley and intravalley configurations split into two levels in a magnetic field along the z axis and the lowest-energy state becomes the intervalley configuration of the two electrons in the valleys with their longitudinal axes perpendicular to the magnetic field. The magnetic field increases the binding energy of a negative donor and the strongest enhancement is attained for the intravalley configuration of the two electrons in the valley with the longitudinal axis parallel to the magnetic field. In the quantum well with the interface within the x-y plane, the quantum confinement effect changes the lowest-energy state of a negative donor from the intervalley configuration in the bulk to the intravalley configuration for which the binding energy is increased most strongly by the magnetic field perpendicular to the well interface. The central-cell correction on the binding energy of a D − ion in a quantum well is also discussed.

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Variational studies of two- and three-dimensionalD−centers in magnetic fields

Cited by 70 publications

References 19 publications

Investigation of D^– centers confined by spherical quantum dots

Investigation of D^– centers confined by spherical quantum dots

Change of symmetry of the barrierD−ground state in finite magnetic fields

Negative donors in bulk Si andSi/SiO2quantum wells in a magnetic field

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Variational studies of two- and three-dimensionalD−centers in magnetic fields

Cited by 70 publications

References 19 publications

Investigation of D– centers confined by spherical quantum dots

Investigation of D– centers confined by spherical quantum dots

Change of symmetry of the barrierD−ground state in finite magnetic fields

Negative donors in bulk Si andSi/SiO2quantum wells in a magnetic field

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Investigation of D^– centers confined by spherical quantum dots

Investigation of D^– centers confined by spherical quantum dots