Negative donors in bulk Si and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>Si</mml:mtext><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mtext>SiO</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>quantum wells in a magnetic field

Inoue, Jun‐ichi; Chiba, Tomo; Natori, Akiko; Nakamura, Jun

doi:10.1103/physrevb.79.035206

Cited by 3 publications

(2 citation statements)

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“…For Si, we obtained ⑀ ij = 1.82 meV and ⑀ ii = 1.57 meV in good agreement with 1.75 meV and 1.55 meV for an interstitial Li impurity. 23 In a preceding paper, 29 we studied negative donors in Si/ SiO 2 quantum wells in a presence of the magnetic field without the valley-orbit interaction and found that strong confinement effect was induced by both the well and the magnetic field.…”

Section: Introductionmentioning

confidence: 98%

D−centers in uniaxially stressed Si and inSi/SiO2quantum wells

2010

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The spin-singlet ground states of a D − ion both in uniaxially stressed Si and in Si/ SiO 2 quantum wells have been investigated for two types of donors, substitutional P and interstitial Li atoms, using a diffusion quantum Monte Carlo method. The valley-orbit interaction due to the singular donor ion potential is taken into account by diagonalizing the multiplet Hamiltonian matrix in the basis set of the ground-state wave functions assigned by the valley indexes. In the uniaxial compressive stress along the ͓100͔ direction, the binding energy of a negative P donor with A 1 symmetry decreases at first and then increases gradually with the stress-induced splitting in the valley energy. This nonmonotonic dependence is attributed to the disparity between the population probability in the stress-deepened valleys for the neutral donor and that for the negative donor. As for Li donors with E symmetry, the binding energy of a negative donor decreases linearly with the stress-induced splitting and then takes a constant value, caused by the transition of the ground state of the negative donor from the intervalley configuration to the intravalley configuration. These calculated behaviors agree with the experiment. In the quantum well in the ͓100͔ direction, the quantum confinement effect deepens the binding energy of a negative donor without the valley-orbit interaction. The same confinement effect is predicted for a Li negative donor ground state with E symmetry, and the binding energy increases monotonically with decrease in the well width. As for a P negative donor with A 1 symmetry, the enhanced binding energy is recovered at the well width of 5 nm although the valley-orbit interaction suppresses the enhancement of the binding energy in wider wells.

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Section: Introductionmentioning

confidence: 98%

D−centers in uniaxially stressed Si and inSi/SiO2quantum wells

2010

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“…An electric gate or an external magnetic field can be used to control and manipulate the electronic states to realize the operation of the devices. The ground state of a donor localized near a semiconductor/insulator/metal interface was recently investigated by using the finite element technique [9,10], the variational approach [2,9] and the quantum Monte Carlo simulation [11]. The effects of the gate potential, the screening of the metallic gate, the finite thickness of the insulator layer between the semiconductor and the gate, as well as the image charge on the impurity potential and the donor states, were investigated [9,10].…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional electron states bound to an off-plane donor in a magnetic field

Bruno-Alfonso

Cândido

Hai

2010

J. Phys.: Condens. Matter

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The states of an electron confined in a two-dimensional (2D) plane and bound to an off-plane donor impurity center, in the presence of a magnetic field, are investigated. The energy levels of the ground state and the first three excited states are calculated variationally. The binding energy and the mean orbital radius of these states are obtained as a function of the donor center position and the magnetic field strength. The limiting cases are discussed for an in-plane donor impurity (i.e. a 2D hydrogen atom) as well as for the donor center far away from the 2D plane in strong magnetic fields, which corresponds to a 2D harmonic oscillator.

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