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Ebina, Atsuko; Fukunaga, Etsuya; Takahashi, Tadashi

doi:10.1103/physrevb.10.2495

Cited by 80 publications

(44 citation statements)

References 19 publications

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“…ZnSe has a zincblende structure with a bandgap energy of 2.7 eV. [20] In addition, as shown in Scheme 1, its conduction band minimum (CBM) and valence band maximum (VBM) straddle the reduction and oxidation potentials for water, making ZnSe suitable for water splitting. However, the absorption edge for ZnSe is about 460 nm, which is not very long.…”

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confidence: 99%

“…The VBM for ZnSe is obtained from PESA measurements (see Figure 2), and the bandgap is set to 2.7 eV. [8,20] Figure 1. Figure 2 shows the dependence of the a lattice parameter and the VBM potential for (ZnSe) x (CIGS) 1-x on the ZnSe mole fraction, as determined from the X-ray diffraction (XRD) peaks at about 27° in Figure S3 (Supporting Information) and the photoelectron spectroscopy in air (PESA) results, respectively.…”

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A Novel Photocathode Material for Sunlight‐Driven Overall Water Splitting: Solid Solution of ZnSe and Cu(In,Ga)Se₂

Kaneko

Minegishi

Nakabayashi

et al. 2016

Adv Funct Materials

108

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content; a similar effect has been found for other material systems. [21][22][23] As shown in Scheme 1, for a solid solution of ZnSe and CIGS, the VBM is expected to be deeper than that for CIGS, and the absorption edge longer than that for ZnSe. In this work, we investigated the PEC properties of (ZnSe) x (CIGS) 1-x thin-film photocathodes. The VBM was 0.25 V deeper than that for CIGS, and the onset potential was 0.89 V RHE , which is 0.17 V higher than that for CIGS. This higher onset potential allows PEC cells to be fabricated with a variety of photoanodes without the need for an external bias voltage. [24][25][26][27] Moreover, (ZnSe) 0.85 (CIGS) 0.15 contains much less of the rare metals indium and gallium. Therefore, (ZnSe) 0.85 (CIGS) 0.15 offers advantages over CIGS from the viewpoint of large-scale applications.Using a (ZnSe) 0.85 (CIGS) 0.15 photocathode with a BiVO 4 photoanode, [28] PEC overall water splitting without the need for an external bias voltage was demonstrated. The two-electrode cell produced stoichiometric amounts of H 2 and O 2 under simulated sunlight. The maximum STH was 0.91%, which is one of the highest values reported for a PEC cell containing a photoanode and a photocathode. [4] Results and Discussion PEC Properties of (ZnSe) 0.85 (CIGS) 0.15 PhotocathodesCurrent density versus potential curves for Pt and Pt/CdS modified (ZnSe) 0.85 (CIGS) 0.15 photocathodes are shown in Figure 1a. This composition was found to produce the largest photocurrent at 0.5 V RHE , as discussed in the next section.Whereas the photocathode modified by Pt alone showed a small cathodic photoresponse, the photocathode modified with both Pt and CdS exhibited a large photocurrent density of 6.5 mA cm −2 at 0 V RHE with a relatively high onset potential of 0.81 V RHE , which was defined as a cathodic photocurrent density of 0.05 mA cm −2 . It has been reported that an n-type CdS layer enhances the degree of charge separation by forming a p-n junction at the solid-liquid interface with the underlying p-type layer, which leads to a larger photocurrent and a higher onset potential because of the change in the band alignment. [29,30] As shown in Figure S1 (Supporting Information), the Pt/CdS/(ZnSe) 0.85 (CIGS) 0.15 photocathode showed no decay in the photocurrent at 0.1 V RHE over a period of more than 1 h. Such stable hydrogen evolution from water is similar to that reported for photocathodes based on chalcopyrites. [30][31][32] The incident photon to current conversion efficiency (IPCE) spectrum shown in Figure 1b indicates that the absorption edge is located around 900 nm. Despite the relatively high fraction of ZnSe, whose absorption edge is about 460 nm, the absorption edge for (ZnSe) 0.85 (CIGS) 0.15 is close to that for CIGS (≈1100 nm). Thus, due to its bandgap and onset potential, (ZnSe) 0.85 (CIGS) 0.15 is the promising material for sunlightdriven hydrogen production from water.Furthermore, insertion of 3-nm-thick Mo and Ti layers between the Pt and CdS improves the photocurrent around the onset potentia...

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A Novel Photocathode Material for Sunlight‐Driven Overall Water Splitting: Solid Solution of ZnSe and Cu(In,Ga)Se₂

Kaneko

Minegishi

Nakabayashi

et al. 2016

Adv Funct Materials

108

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“…This character has also been reported for many alloyed thin films, [7,20,21] alloyed nanocrystals, [22] and alloyed 1D nanostructures, [10,14] although Kwon et al reported that the energy gaps of the alloyed CdS x Se 1-x nanowires varied linearly with the composition. [23] In case of the ZnS x Se 1-x system, the nonlinear variation of the energy gaps can be represented as a quadratic function of composition x, [12,[24][25][26] …”

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Tunable and Predetermined Bandgap Emissions in Alloyed ZnS_xSe_1–_x Nanowires

et al. 2007

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“…The optical bowing parameters for ZnS Se 1− bulk crystal are equal to 0.1 falling into the range of the reported optical bowing parameters (0-0.63) [3,[23][24][25][26]. The energy of the band gap for pure ZnS and ZnSe compounds was calculated by means of Eq.…”

Section: Resultsmentioning

confidence: 92%

Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content

Trubaieva¹,

Lalayants²,

Chaika³

2018

Ukr. J. Phys.

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ZnS Se1− bulk crystals were grown by the Bridgman-Stockbarger method. The transmittance of different samples in the range from 67% to 56% at = 1100 nm (for 4-mm samples) indicates a high optical quality of the crystals. No new states were revealed at the sulfur incorporation, and the band gap depends on the composition. The optical band gap of ZnS Se1− bulk crystals varies from 2.59 to 2.78 eV for direct transitions and from 2.49 to 2.70 eV for indirect transitions. K e y w o r d s: ZnS Se1− bulk crystals, direct transitions, indirect transitions, band gap.

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Variation with composition of theE0andE0+

Cited by 80 publications

References 19 publications

A Novel Photocathode Material for Sunlight‐Driven Overall Water Splitting: Solid Solution of ZnSe and Cu(In,Ga)Se₂

A Novel Photocathode Material for Sunlight‐Driven Overall Water Splitting: Solid Solution of ZnSe and Cu(In,Ga)Se₂

Tunable and Predetermined Bandgap Emissions in Alloyed ZnS_xSe_1–_x Nanowires

Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content

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Variation with composition of theE0andE0+

Cited by 80 publications

References 19 publications

A Novel Photocathode Material for Sunlight‐Driven Overall Water Splitting: Solid Solution of ZnSe and Cu(In,Ga)Se2

A Novel Photocathode Material for Sunlight‐Driven Overall Water Splitting: Solid Solution of ZnSe and Cu(In,Ga)Se2

Tunable and Predetermined Bandgap Emissions in Alloyed ZnSxSe1–x Nanowires

Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content

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A Novel Photocathode Material for Sunlight‐Driven Overall Water Splitting: Solid Solution of ZnSe and Cu(In,Ga)Se₂

A Novel Photocathode Material for Sunlight‐Driven Overall Water Splitting: Solid Solution of ZnSe and Cu(In,Ga)Se₂

Tunable and Predetermined Bandgap Emissions in Alloyed ZnS_xSe_1–_x Nanowires