2017
DOI: 10.1109/tcsii.2016.2581038
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Variation-Tolerant Sensing Circuit for Ultralow-Voltage Operation of Spin-Torque Transfer Magnetic RAM

Abstract: Although promising as a future memory solution, the spin-torque transfer magnetic RAM has critical drawbacks due to small operation margin in low supply voltage and large area of sensing circuit. To overcome these disadvantages, we propose a novel sensing circuit that utilizes the data-dependent body-bias scheme with a single reference cell. Through Monte Carlo simulations using 45-nm process technology model parameters, the proposed circuit is verified to be highly robust to the variations in threshold voltag… Show more

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Cited by 7 publications
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