Sensing of Non-Volatile Memory Demystified 2018
DOI: 10.1007/978-3-319-97347-0_1
|View full text |Cite
|
Sign up to set email alerts
|

Sensing of Spintronic Memories

Abstract: of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specif… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
3
1

Relationship

2
2

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 65 publications
0
3
0
Order By: Relevance
“…Figure 7 demonstrates the implementation of the multistate SOT synapse in a network with two presynaptic neurons (11,12) and two postsynaptic neurons (21,22). As shown in this figure, the learning circuit can be shared between all synapses connected to the same input neuron.…”
Section: Circuit Designmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 7 demonstrates the implementation of the multistate SOT synapse in a network with two presynaptic neurons (11,12) and two postsynaptic neurons (21,22). As shown in this figure, the learning circuit can be shared between all synapses connected to the same input neuron.…”
Section: Circuit Designmentioning
confidence: 99%
“…The FL's magnetization direction can be switched by passing a current higher than a critical current (IC) in the appropriate direction, while the PL's magnetization direction is fixed. The relative magnetization direction of FL and PL determines the MTJ resistance [21,22]. MTJ resistance is in a low state when the magnetization directions of the two magnetic layers are parallel sate (P-state), and it is in a high state if the magnetization directions of the two layers are anti-parallel state (AP-state), which means the MTJ is a bistate device.…”
Section: Introductionmentioning
confidence: 99%
“…Spin–orbit torque (SOT)-based MTJs have been proposed to overcome this issue while improving the switching efficiency 15 . In SOTs, a charge current ( I SOT ) greater than the critical charge current ( I SOT,crit ) flows through a heavy metal (HM) and the switching is accomplished by SOT through the spin Hall effect (SHE) 16 , 17 .…”
Section: Introductionmentioning
confidence: 99%