Variation-Aware Physics-Based Electromigration Modeling and Experimental Calibration for VLSI Interconnects

Nair, Sarath Mohanachandran; Bishnoi, Raiendra; Tahoori, Mehdi B.; Zahedmanesh, Houman; Croes, Kristof; Garello, Kévin; Kar, Gouri Sankar; Catthoor, Francky

doi:10.1109/irps.2019.8720559

Cited by 8 publications

(9 citation statements)

References 11 publications

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“…However, for the bit-lines of the STT array, the dimensions as well as the current density are different from those in [11,12]. The width is 32 nm and the height is 64 nm.…”

Section: Proposed Em Analysis Model a Em Model Calibrationmentioning

confidence: 99%

“…In our previous works [11,12], we have proposed an EM model based on the solution of Korhonen's equation, which has only physical parameters. In this model, the time to failure (TTF) due to EM is divided into the following two phases.…”

Section: Proposed Em Analysis Model a Em Model Calibrationmentioning

confidence: 99%

“…Here, ρ T a and ρ Cu are the resistivities of the barrier material (Ta/TaN) and Cu respectively, W is the line width, H is the Cu thickness and h T a is the barrier layer thickness. This EM model was calibrated for a metal line of width 23 nm and height 60 nm for a current density of 1.68 MA/cm 2 in our previous works [11,12]. The measurements were done at accelerated temperatures of 230 • C, 280 • C and 330 • C. The tests were obtained at package level with a continuous monitor of the resistance versus time which allows an accurate estimation of the failure times.…”

Section: Proposed Em Analysis Model a Em Model Calibrationmentioning

confidence: 99%

“…The value of D 0 was then derived using the minimum Root Mean Square Error (RMSE) method, which minimizes the error between the modeled and measured TTFs at different temperatures. The reader can refer to our previous works ( [11,12]) for a detailed description of the methodology followed.…”

Section: Proposed Em Analysis Model a Em Model Calibrationmentioning

confidence: 99%

“…In addition, the existing EM modeling in signal lines for SRAM [9,10] is based on simple Blech length formulation. In contrast, in this work, we perform EM analysis using the physics-based EM model developed in our previous works [11,12], which is calibrated based on industrial measurement data. This model has been scaled to match the dimensions and material parameters of the BL of the STT array.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays

Nair

Mayahinia

Tahoori

et al. 2021

IEEE Trans. Device Mater. Relib.

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Electromigration (EM) has emerged as a major reliability concern for interconnects in advanced technology nodes. Most of the existing EM analysis works focus on the power lines. There exists a limited amount of work which analyzes EM failures in the signal lines. However, various emerging spintronicbased memory technologies such as the Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) and the Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) have high current densities as compared to the conventional Static Random Access Memory (SRAM). These high current densities can lead to EM failures in the signal lines such as bit-line (BL) of these memories. Furthermore, these signal lines have workloaddependent stress as opposed to the conventional DC stress of power distribution networks. In this work, we model the EM failures in the BL of a typical STT memory array with realistic workloads. The analysis is based on physics-based EM model, which is calibrated based on industrial measurement data. The results show that the current densities in the STT arrays can be large enough to cause EM failures in the signal lines with running realistic workloads and that these failures are highly workload-dependent.

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“…However, for the bit-lines of the STT array, the dimensions as well as the current density are different from those in [11,12]. The width is 32 nm and the height is 64 nm.…”

Section: Proposed Em Analysis Model a Em Model Calibrationmentioning

confidence: 99%

Section: Proposed Em Analysis Model a Em Model Calibrationmentioning

confidence: 99%

Section: Proposed Em Analysis Model a Em Model Calibrationmentioning

confidence: 99%

Section: Proposed Em Analysis Model a Em Model Calibrationmentioning

confidence: 99%