Variable threshold-voltage SOI CMOSFETs with implanted back-gate electrodes for power-managed low-power and high-speed sub-1-V ULSIs

Kachi, Tsuyoshi; Kaga, Toru; Wakahara, S.; Hisamoto, D.

doi:10.1109/vlsit.1996.507818

Cited by 15 publications

(5 citation statements)

References 3 publications

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“…This is because the SOI structure has several advantages, such as a reduced short channel effect, a low parasitic capacitance, a low leakage junction current, and good subthreshold characteristics. [1][2][3][4] However, the ultrathin silicon film layer of UTB SOI-MOSFETs has a serious disadvantage such as their high source/drain (S/D) resistance. Therefore, an elevated S/D (ESD) structure is indispensable for reducing parasitic S/D resistance.…”

Section: Introductionmentioning

confidence: 99%

Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor

Oh¹,

Sakaguchi²,

Fukushima

et al. 2006

jjap

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For high-speed and low-power performance, ultrathin body (UTB) silicon on insulator (SOI) metal oxide semiconductor fieldeffect semiconductors (MOSFETs) with an elevated source/drain (ESD) have been investigated using selectively epitaxial growth (SEG) technology. In this work, we found that the morphology of a SEG layer on an ultrathin Si film and the crystallinity of the top Si film are strongly dependent on ion implantation damage. The morphology and surface roughness of SEG layers were investigated by field emission scanning electron microscopy (FE-SEM) and the crystallinities of the top silicon films with and without ion implantation were characterized by atomic force microscopy (AFM) and Rutherford backscattering spectroscopy (RBS), respectively. Furthermore, to suppress ion implantation damage, a SEG layer was formed before ion implantation for source drain extension (SDE) formation by the sacrificial sidewall spacer method. As results, UTB SOI-MOSFETs with a flat ESD were successfully fabricated by the proposed method.

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Section: Introductionmentioning

confidence: 99%

Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor

Oh¹,

Sakaguchi²,

Fukushima

et al. 2006

jjap

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“…Fully-Depleted (FD) SOI MOSFETs are also promising. However, applications of back-bias scheme to FD SOI MOSFETs [4,5] do not work well because of their small body factor (γ) due to thick buried oxide (BOX).…”

Section: Introductionmentioning

confidence: 99%

Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (&#x003B3;) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm

Ohtou

Saraya

Shimokawa

et al. 2006

2006 International Electron Devices Meeting

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The superior characteristics of variable body-factor (γ) FD SOI MOSFETs which we have recently proposed are experimentally demonstrated. Devices were fabricated on a SOI wafer with BOX thickness of 10 nm by using the 140 nm technology. Their advantages, small leakage-current in the standby-state and improved delay in the active-state, are clearly validated by the measurements. This scheme is expected to be promising for future low-power, high-performance VLSIs.

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“…The suppression of standby power has been a critical issue in VLSI, and the threshold voltage (V th ) control using the body effect in the variable threshold-voltage complementary metal-oxide-semiconductor (CMOS) (VTCMOS) scheme [1][2][3] is one of the most promising techniques of reducing power while maintaining performance. However, it has been generally recognized that it is difficult to apply the VTCMOS scheme to fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs), 4,5) due to their thick buried oxide (BOX).…”

Section: Introductionmentioning

confidence: 99%

Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors

Ohtou

Nagumo

Hiramoto

2005

Jpn. J. Appl. Phys.

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Exact quantum reaction probabilities for a collinear model of the F + HH, HD, D D and DH reactions on the MV potential energy surface have been computed using hyperspherical coordinates. The results, obtained up to a total energy of 1.8 eV, show three main features: (i) resonances, whose positions and widths are analysed simply in the hyperspherical formalism; (ii) a slowly varying background increasing for FHD, decreasing for FDH, and oscillating for FHH and FDD, whose variations are interpreted by classical dynamics; (iii) partial reaction probabilities revealing decreasing vibrational adiabaticity in the order FHH-FDD-FHD-FDH.

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Variable threshold-voltage SOI CMOSFETs with implanted back-gate electrodes for power-managed low-power and high-speed sub-1-V ULSIs

Cited by 15 publications

References 3 publications

Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor

Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor

Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (&#x003B3;) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm

Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors

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Variable threshold-voltage SOI CMOSFETs with implanted back-gate electrodes for power-managed low-power and high-speed sub-1-V ULSIs

Cited by 15 publications

References 3 publications

Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor

Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor

Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (&amp;#x003B3;) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm

Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors

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Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm