Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm

Abstract

The superior characteristics of variable body-factor (γ) FD SOI MOSFETs which we have recently proposed are experimentally demonstrated. Devices were fabricated on a SOI wafer with BOX thickness of 10 nm by using the 140 nm technology. Their advantages, small leakage-current in the standby-state and improved delay in the active-state, are clearly validated by the measurements. This scheme is expected to be promising for future low-power, high-performance VLSIs.