2004
DOI: 10.1143/jjap.43.2293
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Variable RF Inductor on Si CMOS Chip

Abstract: We propose a novel variable inductor on a Si complementary metal oxide semiconductor (CMOS) chip, whose inductance is of nH-order, for GHz applications. The inductance value can be varied by moving a metal plate above the inductor. The magnetic flux penetrating the spiral inductor continuously varies depending on the position of the metal plate. The metal plate is slid horizontally using a micro electro mechanical system (MEMS) actuator. We present the measured and simulated results. At 2.45 GHz, the inductanc… Show more

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Cited by 25 publications
(12 citation statements)
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“…However, they have large series resistance caused by the onresistance in transistor channel, so it is difficult to achieve highquality RF circuit. Recently, the variable capacitor and inductor using MEMS technology are proposed [8,9,10,11,12], which practically achieve wide-range and high-quality characteristics. They have high potential for the reconfigurable RF circuit design, while the manufacturing cost is not low at present time.…”
Section: V P Cmentioning
confidence: 99%
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“…However, they have large series resistance caused by the onresistance in transistor channel, so it is difficult to achieve highquality RF circuit. Recently, the variable capacitor and inductor using MEMS technology are proposed [8,9,10,11,12], which practically achieve wide-range and high-quality characteristics. They have high potential for the reconfigurable RF circuit design, while the manufacturing cost is not low at present time.…”
Section: V P Cmentioning
confidence: 99%
“…Here, the variable MEMS inductors are explained [9,10,11,12]. The variable inductor consists of a conventional planar spiral inductor, a metal plate and a MEMS actuator.…”
Section: V P Cmentioning
confidence: 99%
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“…8 The variable inductor embedded in a Si CMOS chip is achieved by moving a metal plate above the inductor. 9 However, the integration of the inductor and the positioning apparatus of metal-plate shielding is a critical concern.…”
Section: Introductionmentioning
confidence: 99%
“…Due to the change of the internal residual stress by thermal annealing, the height of the inductor can be changed, resulting in the change of inductance. Using the metal-plate-shielding, Sugawara et al [9] proposed the variable inductor embedded in Si CMOS chip. By moving a metal plate above the inductor, the inductance value can be varied.…”
Section: Introductionmentioning
confidence: 99%