Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

Abstract

Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspective. Starting with the discovery of VLS, we feature the variety of structures and materials that can be synthesized in the nanowire form. We then move on to establish distinct features such as the three-dimensional heterostructure/doping design and polytypism. We summarize the status quo of the growth mechanisms, recently confirmed by in situ electron microscopy experiments and defining common ground between the different synthesis techniques. We then propose a selection of remaining defects, starting from what we know and going toward what is still to be learned. We believe this review will serve as a reference for neophytes but also as an insight for experts in an effort to bring open questions under a new light.

Growth Dynamics of Gallium Nanodroplets Driven by Thermally Activated Surface Diffusion

“…[7][8][9] Among various metals, Au nanodroplets are the most commonly used catalyst for the growth of group IV 10 and III-V nanowires. [11][12] However, gold is not compatible with Si technology, 13 and substitutes are required for the integration of nanowires into Si-based processes. In the case of III-V nanowires, the most promising alternative to Au-catalyzed growth is the self-catalyzed approach in which the group III constituent of the nanowire acts itself as a catalyst.…”

“…To put these observations in the context of nanowire growth, we note that semiconductor nanowires are usually grown at higher temperatures, 11 at which Ga has high desorption rate and the nucleation density of the nanodroplets is low. Controlling the desorption rate is important for the growth of nanowires.…”

3D electronic and photonic structures as active biological interfaces

“…In the case of building functional semiconductors with complicated 3D geometries, vapor‐liquid‐solid (VLS) or vapor‐solid (VS) methods have attracted significant attentions due to its simplicity and versatility. An up‐to‐date overview of research concerning VLS and VS is provided in details by Guniat et al…”

GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

“…III-V thin films on silicon have been achieved through strained superlattice growth, 16 buffer growth, 17,18 thermal annealing 13,19,20 and substrate patterning. [21][22][23][24] Additionally, III-V nanostructure growth on silicon 25,26 has also been explored with the growth of vertical nanowires (NWs) on silicon [25][26][27][28][29] or in-plane NWs and ridges. 22,30 Several studies have also explored the use of aspect-ratio trapping to reduce the vertical propagation of defects formed at the substrate interface.…”