Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition

Abstract

Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer of Si, respectively. Therefore, these processes are self-limited in both cases. When a Si cap layer is grown on the P-covered Si(001), high P concentration of 3.7 × 10 20 cm -3 at the heterointerface in the Sicap/P/Si-substrate layer stacks is achieved. Due to As desorption and segregation toward the Si surface during the temperature ramp up and during the Si-cap growth, the As concentration at the heterointerface in the Si-cap/As/Si-substrate layer stacks was lower compared to the P case. These results allowed us to evaluate the feasibility of the VPD process to fabricate precisely controlled doping profiles.

Stability Enhancement of Silver Nanowire Networks with Conformal ZnO Coatings Deposited by Atmospheric Pressure Spatial Atomic Layer Deposition

“…This is the reason, for instance, why sintering of metallic powder is operated in a reductive atmosphere (often in the presence of hydrogen), , to prevent the formation of surface oxide layer that would prevent sintering. A thin interfacial SiO 2 layer is also known to weaken the thermal diffusion of metallic boron or arsenic into silicon. , Figure e shows a schematic representation of the coated nanowires studied here (Figure c,d), and Figure f shows a SEM image of a AgNW coated with 25 nm ZnO.…”

“…A thin interfacial SiO 2 layer is also known to weaken the thermal diffusion of metallic boron or arsenic into silicon. 59,60 Figure 5e exhibits a schematic representation of the coated nanowires studied here (Fig 1c and 1d) while Figure 5f shows a SEM image of a AgNW coated with 25 nm ZnO.…”

Atomically Controlled Processing for Dopant Segregation in CVD Si and Ge Epitaxial Growth

“…[1][2][3][4] The final goal is the generalization of atomic-order surface reaction processes for group IV semiconductors and the creation of new properties in Si-based ultimate small structures (Figure 1). For the creation of atomic-level steep doping profiles, the suppression of dopant segregation during the epitaxial growth of Si and Ge after insitu doping is essential, 5,6 although dopant diffusion characteristics in Ge were reported [7][8][9][10][11][12][13][14] in order to perform precise control of the doping profiles. In this work, we describe the segregation of dopants (P and B) observed for in-situ doping in CVD Si and Ge epitaxial growth.…”

Scaling Challenges for Advanced CMOS Devices

“…Additionally, ion implantation can lead to full amorphization of the fin and problematic recrystallization, resulting in defect formation and poor activation of the dopants 85 . Several alternative doping techniques have been investigated to overcome this issue: hot implantation 101 , plasma doping 103 , vapor phase deposition 104 , and solution-based monolayer doping 105,106 are examples. These alternative doping techniques will become even more relevant for subsequent technologies such as nanowires and vertical FETs.…”