Vapor–liquid–solid growth of thick 2H–SiC layers under CH4 continuous flow

Liquid-Phase Epitaxy

“…Kamei et al [531] studied the effect of solvent composition (pure Si, Si-Al, and Si þ InP) in hightemperature (1650-1800 C) LPE of SiC. Imade et al [534] grew SiC from Li-Si melts at temperatures of 850 C. Nakagawa et al [535] developed a VLS growth process for 2H-SiC based on Li-Si (7:3) solutions under CH 4 continuous flow and growth temperatures in the range of 900-1180 C. Growth rates as high as 45 mm/hr were achieved. Imade et al [534] grew SiC from Li-Si melts at temperatures of 850 C. Nakagawa et al [535] developed a VLS growth process for 2H-SiC based on Li-Si (7:3) solutions under CH 4 continuous flow and growth temperatures in the range of 900-1180 C. Growth rates as high as 45 mm/hr were achieved.…”

Wurtzite SiC Formation in Plastic Deformed 3C and 6H

“…For this reason, they are often called the low temperature phases of silicon carbide, because they are transforming into other polytype modifications during heat treatment [3][4]. 2H-SiC can be synthesized at moderate temperatures using different growth methods vapor liquid solid [5,6] or vapor solid [6] growth methods, chemical vapor deposition methods [7][8][9][10][11][12], molecular beam epitaxy [13], reactive sputtering [14], solution growth [15], pulsed laser deposition [16,17], sublimation growth [18] and many other techniques.…”

2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

“…The hexagonal configuration of carbon in SiC is believed to serve as a good template for the formation of graphene. A thick 2H-SiC was grown on 4H-SiC by vapor-liquid-solid process in Si-Li solution, [5] and a thin 2H-SiC was grown on 6H-SiC by pulsed laser ablation. [6] However, the growth is laboring under the high cost and small size of 6H or 4H-SiC substrates.…”