Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs)

Abstract

Through-silicon vias (TSV) will speed up interconnections between chips. Manufacturable and cost-effective TSVs will allow faster computer systems. In this paper, we report the successful formation of seed layers for plating copper TSVs with aspect ratios greater than 25:1. Following the rapid atomic layer deposition (ALD) of a conformal insulating layer of silica inside the silicon vias, manganese nitride (Mn 4 N) is deposited conformally on the silica surface by chemical vapor deposition (CVD). Mn 4 N forms an effective copper diffusion barrier and provides strong adhesion between the silica and the subsequently-deposited copper. Conformal copper or copper-manganese alloy films are then deposited by an iodine-catalyzed direct-liquid-injection (DLI) CVD process. Diffusion of manganese during post-deposition annealing further enhances the barrier and adhesion properties at the copper/dielectric interface.

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film

“…The q(300 K) value of 125 lX cm is one order of magnitude lower than that of the annealed polycrystalline sample, 2.01 mX cm. 12 This suggests that the present 35-nm-thick Mn 4 N thin film contains far fewer local scattering centers such as impurities, defects, and grain boundaries. The residual resistivity ratio [¼q(300 K)/q(2 K)] was 14.…”

Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation

“…[30][31] X-ray photoelectron spectra (XPS) of DLE-CVD Co samples deposited at different temperatures are provided in Figure 2d. All spectra are taken after 100 s of 100 eV Ar + sputtering to remove surface contamination.…”

Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration

“…It means that it is almost impossible to realize the metallization of vertical TSVs with conventional PVD process for HAR vias because of poor step coverage. Even though some researchers has reported that the AR can be higher by additional atomic layer deposition (ALD) process [5,9], or electroplating process [10], the cost and process complexity will increase rapidly.…”