Valley Two-Qubit System in a 
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-Monolayer Gated Double Quantum dot

Pawłowski, Jarosław; Bieniek, Maciej; Woźniak, Tomasz

doi:10.1103/physrevapplied.15.054025

Cited by 15 publications

(9 citation statements)

References 110 publications

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“…Our results are in agreement with reports using few-layer MoS 2 [8,10], trilayer WSe 2 [12] and monolayer MoS 2 [9], but the origin of the e 2 /h quantization remains unexplained. We attribute this broken valley and spin degeneracy to the formation of valley and spin polarised states of holes, which have been predicted for WS 2 [24,25] and in laterally gated MoS 2 quantum dots [26,27]. Although there is already a substantial body of work explaining non-universal conductance quantization, a full understanding of the so called "0.7 anomaly" in quantum point contacts remains elusive and is assumed to be due to electron-electron interactions [28][29][30][31][32][33][34][35][36][37].…”

Section: Introductionmentioning

confidence: 75%

Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2

Luican‐Mayer

Boddison-Chouinard

Bogan

et al. 2022

Preprint

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Among quantum devices based on 2D materials, gate-defined quantum confined 1D channels are much less explored, especially in the high mobility regime where many body interactions play an important role. We present results of measurements and theory of conductance quantization in a gate-defined one dimensional channel in a single layer of transition metal dichalcogenide material WSe2. In the quasi-ballistic regime of our high mobility sample, we report conductance quantization steps in units of e2/h for a wide range of carrier concentrations. Magnetic field measurements show that as the field is raised higher conductance plateaus move to accurate quantized values and then shift to lower conductance values while the e2/h plateau remains locked. Based on microscopic atomistic tight-binding theory, we show that in this material, valley and spin degeneracies result in 2 e2/h conductance steps for non-interacting holes, suggesting that symmetry breaking mechanisms such as valley polarization dominate the transport properties of such quantum structures.

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Section: Introductionmentioning

confidence: 75%

Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2

Luican‐Mayer

Boddison-Chouinard

Bogan

et al. 2022

Preprint

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“…Monolayer and bilayer TMDs and their heterostructures have been identified as other promising 2D material hosts for gate-defined QD spin-valley qubits [183] . Recent theoretical studies have further described gate operations on single spin qubits [184] and both one-and twospin-valley [185] and valley [186] qubit systems in TMDs. Fig.…”

Section: Transition Metal Dichalcogenide (Tmd) Qdsmentioning

confidence: 99%

Nanomaterials for Quantum Information Science and Engineering

et al. 2022

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Quantum information science and engineering (QISE) which entails generation, control and manipulation of individual quantum mechanical states together with nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid state devices for QISE have, to this point, predominantly been designed with bulk material as their constituents. In this review, we consider how nanomaterials or low-dimensional materials i.e. materials with intrinsic quantum confinement -may offer inherent advantages over conventional materials for QISE. We identify the materials challenges for specific types of qubits, and we identify how emerging nanomaterials may overcome these challenges. Challenges for and progress towards nanomaterials-based quantum devices are identified. We aim to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.

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“…For instance, numerical studies of TMDCs quantum dots have shown that large g-factors are desirable to efficiently tune the spin-valley qubits at moderate external magnetic fields. [68][69][70] While exciton g-factors are widely investigated for TMDCs, [71] such magnetooptical properties of 1L MA 2 Z 4 have not been reported so far.…”

Section: Introductionmentioning

confidence: 99%

Electronic and Excitonic Properties of MSi₂Z₄ Monolayers

Woźniak

Umm-e-Hani

Faria

et al. 2023

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MA2Z4 monolayers form a new class of hexagonal non‐centrosymmetric materials hosting extraordinary spin‐valley physics. While only two compounds (MoSi2N4 and WSi2N4) are recently synthesized, theory predicts interesting (opto)electronic properties of a whole new family of such two‐dimensional (2D) materials. Here, the chemical trends of band gaps and spin‐orbit splittings of bands in selected MSi2Z4 (M = Mo, W; Z = N, P, As, Sb) compounds are studied from first‐principles. Effective Bethe–Salpeter‐equation‐based calculations reveal high exciton binding energies. Evolution of excitonic energies under external magnetic field is predicted by providing their effective g‐factors and diamagnetic coefficients, which can be directly compared to experimental values. In particular, large positive g‐factors are predicted for excitons involving higher conduction bands. In view of these predictions, MSi2Z4 monolayers yield a new platform to study excitons and are attractive for optoelectronic devices, also in the form of heterostructures. In addition, a spin‐orbit induced bands inversion is observed in the heaviest studied compound, WSi2Sb4, a hallmark of its topological nature.

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Valley Two-Qubit System in a MoS2 -Monolayer Gated Double Quantum dot

Cited by 15 publications

References 110 publications

Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2

Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2

Nanomaterials for Quantum Information Science and Engineering

Electronic and Excitonic Properties of MSi₂Z₄ Monolayers

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Valley Two-Qubit System in a MoS2 -Monolayer Gated Double Quantum dot

Cited by 15 publications

References 110 publications

Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2

Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2

Nanomaterials for Quantum Information Science and Engineering

Electronic and Excitonic Properties of MSi2Z4 Monolayers

Contact Info

Product

Resources

About

Electronic and Excitonic Properties of MSi₂Z₄ Monolayers