1991
DOI: 10.1002/pssa.2211260237
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Validation of The Charge Pumping Method down to Liquid Helium Temperature

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Cited by 4 publications
(1 citation statement)
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“…Dedicated methods can be used to obtain the interface state density (N it ) at the gate-oxide/semiconductor interface in FETs, such as charge pumping or based on capacitance-voltage measurements. 41,58,59 On the other hand, N it can also be obtained from simple dc measurements by extracting the N it from the measured SS. However, this method is only applicable if (and only if) the used model for SS takes into account the important physical phenomena that have an impact on SS.…”
Section: Solving the Singularity Related To Interface Statesmentioning
confidence: 99%
“…Dedicated methods can be used to obtain the interface state density (N it ) at the gate-oxide/semiconductor interface in FETs, such as charge pumping or based on capacitance-voltage measurements. 41,58,59 On the other hand, N it can also be obtained from simple dc measurements by extracting the N it from the measured SS. However, this method is only applicable if (and only if) the used model for SS takes into account the important physical phenomena that have an impact on SS.…”
Section: Solving the Singularity Related To Interface Statesmentioning
confidence: 99%