We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1=f noise found in these devices (i.e., the Hooge parameter is on the order of 10 04) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize their performance. It was also found that the slop of the 1=f noise density spectrum is in the 1.0-1.3 range for all devices and decreases with the decreasing (i.e., more negative) gate bias. The results are important for low-noise electronic technologies requiring a low phase-noise level.
Abstract-A novel simulation-independent charge pumping (CP) technique is employed to accurately determine the spatial distributions of interface ( ) and oxide ( ) traps in hot-carrier stressed MOSFET's. Direct separation of and is achieved without using simulation, iteration, or neutralization. Better immunity from measurement noise is achieved by avoiding numerical differentiation of data. The technique is employed to study the temporal buildup of damage profiles for a variety of stress conditions. The nature of the generated damage and trends in its position are qualitatively estimated from the internal electric field distributions obtained from device simulations. The damage distributions are related to the drain current degradation, and well-defined trends are observed with the variations in stress biases and stress time. Results are presented which provide fresh insight into the hot-carrier degradation mechanisms.Index Terms-Charge pumping, hot-carrier effect, MOSFET, spatial damage profiles.
Abstract-The influence of channel length and oxide thickness on the hot-carrier induced interface () and oxide ( ) trap profiles is studied in n-channel LDD MOSFET's using a novel charge pumping (CP) technique. The technique directly provides separate and profiles without using simulation, iteration or neutralization, and has better immunity from measurement noise by avoiding numerical differentiation of data. The and profiles obtained under a variety of stress conditions show well-defined trends with the variation in device dimensions. The generation has been found to be the dominant damage mode for devices having thinner oxides and shorter channel lengths. Both the peak and spread of the profiles have been found to affect the transconductance degradation, observed over different channel lengths and oxide thicknesses. Results are presented which provide useful insight into the effect of device scaling on the hot-carrier degradation process.Index Terms-Channel length and oxide thickness dependence, charge pumping, hot-carrier effect, MOSFET, spatial profiling of damage.
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