Valence band structure of YMnO3 and the spin orbit coupling

Kumar, Manish; Choudhary, R. J.; Phase, D. M.

doi:10.1063/1.4804618

Cited by 24 publications

(10 citation statements)

References 29 publications

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“…The smallest binding energy of O is approximately 7.0 eV for O 2p. 61 Nevertheless, the O 2p states spread throughout the VB, 62 which will overlap with the Mn 3d and Yb 4f states due to hybridization. 48 Thus, the BS of YbMnO 3 could be described as shown in Figure S10, and the mechanisms of the absorption and fluorescence spectra displayed in Figure 3b,e could be well explained using this scheme.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates

et al. 2020

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Tremendous success has been achieved in photovoltaic (PV) applications, but PV-generated electricity still cannot compete with traditional power in terms of price. Chemically stable and nontoxic all-oxide solar cells made from earth-abundant resources fulfill the requirements for low-cost manufacturing under ambient conditions and thus are promising as the next-generation approach to solar cells. However, the main obstacles to developing all-oxide solar cells are the spectral absorbers. Besides photovoltaics, novel chemically stable, nontoxic, and earth-abundant narrow-bandgap semiconductors are desired for photochemical applications in photodetectors, photoelectrodes, or photocatalysts. Herein, were report novel lead-free perovskite narrow-bandgap rare-earth semiconductors, YMnO 3 , HoMnO 3 , ErMnO 3 , and YbMnO 3 , which were identified by screening a family of perovskite rare-earth manganates, RMnO 3 (R = Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, and Yb). The sharp edge observed in their absorption spectra indicates the existence of band gaps, further confirmed with laser Raman fluorescence spectra. Good periodic on−off photoelectronic response was observed in 8 of the 12 members (i.e., R = La, Pr, Nd, Sm, Gd, Tb, Dy, and Yb). Among them, YbMnO 3 is approved as an n-type semiconductor with a direct band gap near 1.35 eV, whose theoretical Shockley−Queisser efficiency is approximately 33.7% for single-p−n-junction solar cells. This work sheds light on exploring stable oxide semiconductors with a narrow band gap for future applications.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates

et al. 2020

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“…Pulsed laser deposition (PLD) as a thin film growth technique was not much popular until the late 1980s, when it has been used to grow superconducting YBa 2 Cu 3 O 7 -δ films [114]. Since then, the amount of research involving this technique has increased significantly and a number of compositions have been stabilized in thin film successfully [115][116][117][118][119][120][121][122]. The schematic of PLD system is shown in Figure 9.…”

Section: Mgo Thin Filmsmentioning

confidence: 99%

Bottom-Up and Top-Down Approaches for MgO

Singh¹,

Kumar²,

Sharma³

et al. 2020

Sonochemical Reactions

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In this chapter, we present an overview of synthesis of MgO nanoparticles and thin films by using top-down and bottom-up approaches. The bottom-up approaches are generally utilized to grow nanoparticles by the methods that involve chemical reactions. Sometimes, methods based on these reactions are also able to grow thin films. The top-down approaches are preferred for growing thin films where bulk material is used for depositions. The methods, which are frequently used, are radio frequency sputtering, pulsed lased deposition, and molecular beam epitaxy and e-beam evaporation. Sometimes, methods like mechanical milling and high energy ball milling are used to grow nanoparticles.

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“…This is driven by the fact that these materials react to the variation in parameters such as temperature, pressure, electric or magnetic fields etc. [2][3][4][5][6][7][8][9][10][11][12][13]. Vanadium dioxide (VO 2 ) is a well-known 'smart material' which is popular since the Morin' work in 1959 [14].…”

Section: Introductionmentioning

confidence: 99%

Thin Film Stabilization of Different VO₂Polymorphs

Kumar¹,

Saharan²,

Rani³

2021

Thin Films

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In recent years, VO2 has emerged as a popular candidate among the scientific community across the globe owing to its unique technological and fundamental aspects. VO2 can exist in several polymorphs (such as: A, B, C, D, M1, M2, M3, P, R and T) which offer a broad spectrum of functionalities suitable for numerous potential applications likewise smart windows, switching devices, memory materials, battery materials and so on. Each phase of VO2 has specific physical and chemical properties. The device realization based on specific functionality call for stabilization of good quality single phase VO2 thin films of desired polymorphs. Hence, the control on the growth of different VO2 polymorphs in thin film form is very crucial. Different polymorphs of VO2 can be stabilized by selecting the growth route, growth parameters and type of substrate etc. In this chapter, we present an overview of stabilization of the different phases of VO2 in the thin film form and the identification of these phases mainly by X-ray diffraction and Raman spectroscopy techniques.

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Valence band structure of YMnO3 and the spin orbit coupling

Cited by 24 publications

References 29 publications

Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates

Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates

Bottom-Up and Top-Down Approaches for MgO

Thin Film Stabilization of Different VO₂Polymorphs

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Valence band structure of YMnO3 and the spin orbit coupling

Cited by 24 publications

References 29 publications

Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates

Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates

Bottom-Up and Top-Down Approaches for MgO

Thin Film Stabilization of Different VO2Polymorphs

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Thin Film Stabilization of Different VO₂Polymorphs