Valence band hybridization in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>-rich<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GaN</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mi>x</mml:mi><

Wu, Junqiao; Walukiewicz, W.; Yu, K. M.; Denlinger, Jonathan D.; Shan, W.; Ager, Joel W.; Kimura, Akitaka; Tang, H. F.; Kuech, T. F.

doi:10.1103/physrevb.70.115214

Cited by 93 publications

(112 citation statements)

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“…For both techniques, it is difficult to obtain a high concentration of As in the alloy before phase separation occurs. The 6 highest reported As content in MOVPE grown layers is x~0.067 [10,11,12] [21,22,23]. The atomic diffusion length in these non-equilibrium processes is long enough to form crystalline lattices with uniform compositions, but short enough to avoid equilibrium phase segregation.…”

Section: Low Temperature Molecular Beam Epitaxial Growth Of Ga-n-asmentioning

confidence: 99%

“…It was found that GaN doped with As at low, impurity like levels shows a characteristic blue emission at room temperature. At higher As doping levels an abrupt decrease in the band gap of resulting GaN 1-x As x alloys was observed [9,10,11,12]. Fig.…”

mentioning

confidence: 93%

“…The As derived localized states interact strongly with the extended p-states of the host. The interaction splits the valence band into a series of E + and E -sub-bands with dispersion relations that are dependent on the As concentration [12,14]. This valence band anticrossing (VBAC) has been successful in explaining the valence band restructuring in many dilute alloys where a small fraction of the anions are replaced by more metallic impurities, including GaBi x As 1-x [15,16], GaSb x As 1-x [17] and Sn x Ge 1-x [18].…”

Section: Band Anticrossing In Highly Mismatched Iii-v Diute Alloysmentioning

confidence: 99%

“…Fig. 1 shows the experimental band gap of both As-rich [2] and N-rich [12] GaNAs HMAs. It is obvious that these data cannot be explained by a virtual crystal approximation (VCA) represented by the dashed line.…”

Section: Dilute Alloysmentioning

confidence: 99%

“…Wu et al [12] investigated the BAC in N-rich and As-rich GaNAs alloys with a limited range of composition and interpolated the composition dependence of the band gap of GaN 1-x As x alloys over the entire composition shown by the solid curve in Fig. 1.…”

Section: Band Anticrossing In Highly Mismatched Iii-v Diute Alloysmentioning

confidence: 99%

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Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Новиков

Broesler

et al. 2009

Journal of Applied Physics

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Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general formed of component elements that are well matched in terms of ionicity, atom size and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN 1-x As x a highly mismatched, immiscible alloy system that was successfuly synthesized in the whole composition range using a non-equilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.170.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offers an opportunity of using GaN 1-x As x alloys for various types of solar power conversion devices. 3 1. The Ga-N-As Alloy system Dilute alloysSemiconductor alloys formed through substitution of atoms with very different electronegativity and/or size have been known as highly mismatched alloys (HMAs).Because of large miscibility gaps, typically HMAs consist of a semiconductor matrix (elemental or compound) with the substitution of a small amount (up to several percents) of distinctly different isovalent atoms. The HMAs show large band gap reduction and their electronic structure is drastically different from their host materials. This is in contrast to conventional semiconductor alloys such as AlGaAs and GaAsP whose physical, electronic and optical properties can be deduced from a linear interpolation between their corresponding end point compounds with only a slight deviation, as predicted by the virtual crystal approximation (VCA). A most notable example of HMAs is the As-rich GaN x As 1-x in which strong band gap reduction by as much as 180 meV per mole percent of N has been observed [1,2,3,4]. The strong dependence of the band gap on the N content has made these diluted III-V nitrides important materials for a variety of applications, including long wavelength optoelectronic devices [5,6] and high efficiency hybrid solar cells [7,8].In contrast to the very extensively studied As-rich GaNAs alloys much less work has been devoted to HMAs on the N-rich side of this alloy system. It was found that GaN doped with As at low, impurity like levels shows a characteristic blue emission at room temperature. At higher As doping levels an abrupt decrease in the band gap of...

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Section: Low Temperature Molecular Beam Epitaxial Growth Of Ga-n-asmentioning

confidence: 99%

mentioning

confidence: 93%

Section: Band Anticrossing In Highly Mismatched Iii-v Diute Alloysmentioning

confidence: 99%

Section: Dilute Alloysmentioning

confidence: 99%

Section: Band Anticrossing In Highly Mismatched Iii-v Diute Alloysmentioning

confidence: 99%

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Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Новиков

Broesler

et al. 2009

Journal of Applied Physics

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Applications of Bismuth‐ContainingIII–VSemiconductors in Devices

Asahi

Horíkoshi²

2019

Molecular Beam Epitaxy

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Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls

Ciechanowicz

Gorantla

Michałowski

et al. 2020

Advanced Optical Materials

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Nano‐ and micro‐rods of GaN offer many functionalities that are not present in regular flat nanostructures. Therefore, development of new growth methods of such structures is a hot topic. In this work the arsenic‐induced growth of GaN microrods under Ga‐rich conditions in the molecular beam epitaxy is presented. It is a self‐catalyst vapor–liquid–solid process with native Ga droplets. The formation of Ga droplets is induced by antisurfactant properties of arsenic. The presence of As during the epitaxial process promotes the growth of dodecagonal microrods with 12 walls: six m‐planes and six a‐planes. It is possible since As changes the growth rates for the different GaN planes comparing to arsenic‐free conditions, where hexagonal microrods are usually formed. The growth parameters and their influence on the sample morphology are carefully studied in this work. Microrods with an average height and diameter of 3 and 0.7 µm, respectively, and the density of 2.3 × 107 cm−2, are obtained under optimal growth conditions. The observed mechanism of growth of microrods can also be present in other material systems by introducing atoms with antisurfactant properties under metal‐rich conditions, where the surface is covered by a metal monolayer.

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Valence band hybridization inN-richGaN1−xAsx<

Cited by 93 publications

References 25 publications

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Applications of Bismuth‐ContainingIII–VSemiconductors in Devices

Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls

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