Valence and conduction band offset measurements in Ni0.07Zn0.93O/ZnO heterostructure

UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process

“…Therefore, the measured ΔEV and ΔEC are found to be 1.50 eV and 1.83 eV, respectively, which are very close to the values reported by Zhi Guo Yang et al [29]. The schematic band alignment of the NiO thin film/ZnO nanorods heterojunction is shown in Figure 6.…”

“…where ( Also, the conduction band offset of the heterojunction can be measured using following equation [27,29]:…”

“…The core levels (CLs) and valence band (VB) edge XPS spectra of ZnO (sample 1) and NiO (sample 2) are shown in Figure 3 Table 1. The valence band offsets of the NiO thin film/ZnO nanorods heterojunction were measured using the following equation [27,29]:…”

Electrical and magnetic transport properties of undoped and Ni doped ZnO thin films

“…In our opinion the absolute contributions of electron-magnetic impurity interaction and intergrains tunneling to the MR can be judged in a parallel geometry where Lorentz force contributions are negligible. In our previous magnetotransport measurements on pulsed laser deposited (PLD) Ni doped ZnO thin films, we found the change in sign of MR from negative to positive at 2 K temperature and 6 T magnetic field while only negative MR was observed at room temperature [12].…”

“…Doping with Ni in ZnO not only imparts the magnetism [11] in ZnO but also results in the red shift of the band gap [12]. These properties combiningly make it an important source for the use in monolithic optical integrated circuit application with higher threshold [13].…”