UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process

Echresh, Ahmad; Chey, Chan Oeurn; Shoushtari, Morteza Zargar; Khranovskyy, Volodymyr; Nur, Omer; Willander, Magnus

doi:10.1016/j.jallcom.2015.01.155

Cited by 123 publications

(41 citation statements)

References 33 publications

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“…Realization of p-ZnO is quite challenging since ZnO behaves as an intrinsic n-type semiconductor. Owing to this experimental difficulty in achieving stable p-ZnO, earlier reports suggests NiO as an alternate ptype layer in the fabrication p-NiO/n-ZnO heterojunction photodiodes [15,16]. In this work, stable and low resistive p-ZnO has been successfully achieved by dual acceptor doping of group-V elements P and N simultaneously in ZnO.…”

Section: A N U S C R I P Tmentioning

confidence: 93%

Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes

Amiruddin

Kumar

2016

Current Applied Physics

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Section: A N U S C R I P Tmentioning

confidence: 93%

Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes

Amiruddin

Kumar

2016

Current Applied Physics

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“…This material has important properties which are explored for several applications such as smart windows [11], dye sensitized photocathode [12], transparent p-type semi-conductors [13,14], and gas sensors [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Amor¹,

Hamzaoui²,

Boukhachem³

et al. 2015

Advances in Ceramic Science and Engineering

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Tin-doped nickel oxide thin films have been successfully prepared by spray pyrolysis technique on glass substrates at 460°C. The effects of tin doping on structural, optical, and electrical properties were investigated. X-ray diffraction pattern reveals that all prepared thin films have cubic structure with (111) preferred orientation. The surface topography of these films was performed by atomic force microscopy. Optical measurements show a high transparency in the visible range around 95%. The optical band gap Eg decreases with Sn content from 3.633 to 3.54 eV. PL measurements show some bands transition which shift irregularly with Sn doping. Finally, the electric conductivity of NiO thin film was investigated through the impedance spectroscopy measurements in the frequency range 5 Hz-13 MHz at various temperatures. These measurements show a thermally activation of the electric. AC conductivity of NiO thin films is investigated through Jonscher law. Also, from these measurements, dielectric parameters were calculated.

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“…Under all the voltage biases, the response time of the device was less than the 200 ms, the actual response time could not be measured in this study due to experimental limitations. The above mentioned features render the devices under present study much superior photodetection attributes compared to NiO-ZnO heterojunctions, where the response time is a few tens of seconds with high dark currents821. The responsivities of the photodiode obtained using a red laser beam with intensity of illumination I = 15 mW/cm 2 are 0.24 AW −1 (+10 V) and 0.16 AW −1 (−1 V).…”

Section: Resultsmentioning

confidence: 79%

Robust electric-field tunable opto-electrical behavior in Pt-NiO-Pt planar structures

Rebello

Adeyeye

2016

Sci Rep

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Capacitor-like metal-NiO-metal structures have attracted large interest in non-volatile memory applications based on electric field control of resistance, known as resistive switching (RS). Formation of conducting nanofilaments by the application of an electric field (electroformation) is considered an important pre-requisite for RS. Besides RS, due to the wide band gap and p-type semiconducting nature, NiO has been used to fabricate heterojunctions for photodetector applications. However, very little is known about the electrical and opto-electrical properties of NiO films in planar structure. Here, we demonstrate intriguing photoresponse and electrical behavior in electroformed Pt-NiO-Pt planar structures. While the pristine devices show ohmic electrical behavior and negligible photoresponse, the electroformed devices exhibit a nonlinear rectification behavior and a remarkable photoresponse at low voltage biases. More interestingly, the devices show a dramatic change of sign of rectification under light illumination at higher voltage biases. A polarity dependent and robust gain phenomenon is demonstrated in these devices. The large sensitivity, fast response, simple design and ease of preparation of these planar structures make them attractive for integration with current circuit technologies and various novel opto-electrical applications.

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UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process

Abstract: Corresponding author e-mail: ahmadechresh@gmail.com AbstractA UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction was fabricated using a simple two-step fabrication process. The aqueous chemical hydrothermal and implying the vitality of the presented two-step process.

Cited by 123 publications

References 33 publications

Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes

Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Robust electric-field tunable opto-electrical behavior in Pt-NiO-Pt planar structures

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