Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes

Amiruddin, R.; Kumar, M.C. Santhosh

doi:10.1016/j.cap.2016.06.003

Cited by 30 publications

(11 citation statements)

References 56 publications

(51 reference statements)

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“…The response and recovery time of the fabricated AZO nanowire UV photodiodes are calculated as 61 ± 11 and 455 ± 41 ms, respectively. The observed fast photoresponse characteristic in the order of milliseconds was not observed in our earlier report , where the measured response time was in the order of few seconds. The primary reason for improved response speed can be attributed to the increase in effective active area due to the presence of 1‐D AZO nanostructures rather than thin film layers.…”

Section: Resultscontrasting

confidence: 84%

“…Thus, the increased photo‐generated current helps in detection of incident UV radiation. During this mechanism, the NiO EBL deposited in between the p–n junctions plays an important role in reducing the dark current of the fabricated photodiodes by controlling the electron overflow from the cathode of the device .…”

Section: Resultsmentioning

confidence: 99%

“…With p‐type characteristics and a direct wide band gap (3.7–4.0 eV), NiO has the potential to be considered as an effective EBL in the fabrication of UV photodiodes and LEDs . In a recent report , the role of NiO as an intermediate EBL has been investigated by comparing the fabricated UV photodiodes with and without NiO layers. It was observed that the addition of NiO EBL considerably reduces the dark current of the device and enhances the UV photoresponse properties.…”

Section: Introductionmentioning

confidence: 99%

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High-speed photoresponse properties of ultraviolet (UV) photodiodes using vertically aligned Al:ZnO nanowires

Amiruddin

Kumar

2017

Phys. Status Solidi A

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Ultraviolet (UV) photodiodes with fast photoresponse properties were fabricated using vertically aligned aluminum doped ZnO nanowires. Stable p-type ZnO have been achieved by doping equimolar concentration of P-N (0.75 at.%) simultaneously in ZnO. The vertically aligned and electrically conducting n-type Al (3 at.%) doped ZnO nanowires were grown by a simple aqueous chemical growth process. The structural, morphological, optical, and electrical properties were investigated. For the fabrication of UV photodiodes, the optimum p-type ZnO layers and n-type ZnO nanowires were stacked upon ITO substrate. A 250 nm thin NiO was deposited as an electron blocking layer (EBL) in between the ZnO p-n junctions. The current densityvoltage (J-V) characteristic of the fabricated UV photodiode was measured under dark and UV illumination conditions. Under a reverse bias of 3 V, the device exhibits a high photoresponsivity (R) value of 15.07 (A/W) upon illumination of UV light (l ¼ 365 nm). The fabricated photodiode exhibits a fast photoresponse switching characteristics with a response and recovery time calculated as 61 AE 11 and 455 AE 41 ms, respectively. The role of vertically aligned nanowires in the formation of oxygen interstitial (O i ) defects and its impact on improving the UV photoresponse properties were investigated.

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Section: Resultscontrasting

confidence: 84%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-speed photoresponse properties of ultraviolet (UV) photodiodes using vertically aligned Al:ZnO nanowires

Amiruddin

Kumar

2017

Phys. Status Solidi A

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“…In particular, NiO is considered an attractive candidate due to its wide band gap above 3.6 eV, intrinsic p-type conductivity, abundant availability, chemical stability, non-toxicity, low-cost, the fact that its easily producible, etc. [19][20][21]. To date, NiO has been widely studied in various domains, such as photoanodes [22], electrochromic materials [23], gas sensors [24], and photoelectrochemical cells [25,26].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

et al. 2018

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In this work, p-type non-stoichiometric Ni 1−x O thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0-100%) on the films' optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films' conductivity improves from 9.1 to 25.4 S•cm −1. This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films' carrier concentrations. In addition, with an increasing oxygen flow ratio, the film's transmittance degrades. The direct optical band gap of Ni 1−x O films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%.

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“…However, the NiO as the thin films were used in various applications due to the simplicity of synthesis can be investigated in solar cells [7], chemical sensors [8], photodetedors [9], electro chromic minors [10], organic light emitting diodes [11] , UV detectors [12], vans parent diodes [13] , and defrosting windows [14]. NiO thin films can be prepared by various methods likely molecular beam epitaxy techniques (MBE) [15], electrochemical techniques [16], chemical vapor techniques [17], sol-gel process [18], reactive evaporation [19], pulsed laser deposition techniques (PLD) [20], magnetron sputtering technique [21] and spray pyrolysis techniques [22]. The spray method was used for technological applications because it is one of the most important techniques to deposition a large-scale production.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Deposited NiO Thin Films by Spray Pyrolysis Technique

Zaouche

Aoun

Benramache

et al. 2019

Scientific Bulletin of Valahia University - Materials and Mechanics

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In this work, nickel oxide was fabricated on glass substrate at 450 °C by spray pyrolysis technique. The NiO layers were obtained with 0.05M molarity, which were deposited by various deposition rates 20, 40, 60 and 80 ml. The effects of deposition rate on the structural, electrical and optical properties were examined. All fabricated NiO thin films were observed a nanocrystalline a cubic structure with a strong (111) preferred orientation, it is only phase was observed in all deposited NiO. The film elaborated with 60 ml have a minimum value of crystallite size was 15.8 nm. All NiO thin films have an average transmittance is about 70 % in the visible region. The NiO thin films have a verity in the band gap energy from 3.34 to 3.51 eV because the effect of deposition, the minimum value was found at 80 ml, this condition have a lowest Urbach energy. The NiO thin films have an electrical resistivity was decreased from 0.625 to 0.152 (Ω.cm) with increasing the deposition rate from 20 to 80ml. The best results of NiO thin films are obtained in the deposition NiO films by 40 and 80 ml.

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Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes

Cited by 30 publications

References 56 publications

High-speed photoresponse properties of ultraviolet (UV) photodiodes using vertically aligned Al:ZnO nanowires

High-speed photoresponse properties of ultraviolet (UV) photodiodes using vertically aligned Al:ZnO nanowires

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

Synthesis and Characterization of Deposited NiO Thin Films by Spray Pyrolysis Technique

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