Electrical and magnetic transport properties of undoped and Ni doped ZnO thin films

Temperature induced transition from p-n to n-n electronic behavior in Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction

“…The possibility of creation of large electron concentration at higher temperature in Ni 0.07 Zn 0.93 O film can be explained on the basis of the following reported observation; The resonant photoemission spectroscopy studies by Yin et al [16] show that in Ni 0.14 Zn 0.86 O, Ni-3d states lie near the valence band of ZnO. This feature has also been observed in our recent study of the valence band spectra of NiZnO (Ni=5%) [17]. The Ni-3d states are split into lower energy doublet (e g ) and higher energy triplet (t 2g ) states due to the crystal field splitting [11].…”

Role of Ni2+(d8) ions in electrical, optical and magnetic properties of CdS nanowires for optoelectronic and spintronic applications

“…It was also reported that heavy (∼15%) Ni doping decreases saturation magnetization in CdSe nanorods (NRs) due to super-exchange interactions [34]. Ni-doping in ZnO thin films produced three times larger magneto-resistance, as shared by Dar et al [21]. He et al obtained 30 times enhanced electrical conductivity in ZnO NWs due to the incorporation of Ni ions [7].…”

“…Ni 2+ (3d 8 ) is an exceptional transition metal due to its chemical stability and ferromagnetic nature. Ni(II) ions have been doped into low dimensional nanostructures of ZnO, Zn and Cd based monochalcogenides in the form of quantum dots (QDs) [11,12], nanocrystals (NC) [13][14][15][16][17], composites [18,19], one-dimensional (1D) structures [7,20], and thin films [21][22][23]. It showed great success in improving the photo-catalytic, magnetic, optical and electrical properties of the host materials for various applications.…”