Vacancy–hydrogen complexes in ammonothermal GaN

Tuomisto, Filip; Kuittinen, T.; Zając, M.; Doradziński, R.; Wasik, D.

doi:10.1016/j.jcrysgro.2014.06.005

Cited by 45 publications

(57 citation statements)

References 24 publications

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“…[26,[34][35][36] Ammonothermal GaN substrates have been used in homoepitaxy [35,37,38] and as substrates for InGaN LDs. [39] Although the crystalline quality of ammonothermal GaN is very high, recent studies have shown that the high concentration of impurities [22,40,41] and native point defects [42][43][44] in the as-grown material have a significant effect on the material properties. The most dominant impurities, oxygen and transition metals, cause absorption in the visible region [23,42] and their non-uniform incorporation in the growing crystal can cause build-up of strain.…”

Section: Progress Reportmentioning

confidence: 99%

“…[66,78,80] V Ga and their complexes can be detected by positron annihilation spectroscopy [88] and optical absorption measurements in the mid-infrared wavelength range. [43,44,89] …”

Section: Gallium Vacancies and Vacancy Clustersmentioning

confidence: 99%

“…[88] Positron methods have been widely applied to study vacancy defects in bulk nitride semiconductors, [34,78,80,[90][91][92][93][94][95] including crystals grown by the ammonothermal method. [44,79,96] Positrons implanted into a sample can get trapped in and localize at neutral and negative vacancies due to the missing positive ion core. The trapping of positrons at these defects is observed as well-defined changes in the positron-electron annihilation radiation, i.e., as an increase of the positron lifetime and a narrowing of the momentum distribution of the annihilating positron-electron pair (Doppler broadening).…”

Section: Positron Annihilation Spectroscopymentioning

confidence: 99%

“…This can be interpreted as saturation trapping to Ga vacancies decorated with hydrogen, with the average amount of hydrogen in the vacancy defects being higher in the samples with lower O content (for details of this reasoning, see ref. [44]). In fact, electrical compensation is stronger in the lower-O-containing material, pointing towards the interplay between O, H, and the Ga vacancy complexes being the key to understanding the free electron concentration dependence on the O and H concentrations in ammonothermal GaN.…”

Section: Progress Reportmentioning

confidence: 99%

“…The frequency of these vibrational stretch modes have been calculated from first principles and lie between 3100-3650 cm −1 . [81,87] Optical absorption measurements using Fourier transform infrared (FTIR) spectroscopy have been used to detect V Ga -H complexes in GaN crystals grown by the ammonothermal method [43,44,89] and in proton irradiated GaN films. [97,98] The absorbance of semiconductor material in the near infrared range is governed by the free carrier absorption, which can be modeled with the Drude model.…”

Section: Optical Absorption Measurements Of V Ga -Hmentioning

confidence: 99%

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Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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Section: Progress Reportmentioning

confidence: 99%

“…[66,78,80] V Ga and their complexes can be detected by positron annihilation spectroscopy [88] and optical absorption measurements in the mid-infrared wavelength range. [43,44,89] …”

Section: Gallium Vacancies and Vacancy Clustersmentioning

confidence: 99%

Section: Positron Annihilation Spectroscopymentioning

confidence: 99%

Section: Progress Reportmentioning

confidence: 99%

Section: Optical Absorption Measurements Of V Ga -Hmentioning

confidence: 99%

See 3 more Smart Citations

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Ammonothermal and HVPE Bulk Growth of GaN

Kucharski

Sochacki

Łucznik

et al. 2021

Wide Bandgap Semiconductors for Power Electronics

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Ammonothermal Synthesis of Nitrides: Recent Developments and Future Perspectives

Häusler

Schnick

2018

Chemistry A European J

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Nitrides represent an intriguing class of functional materials with a broad range of application fields. Within the past decade, the ammonothermal method became increasingly attractive for the synthesis and crystal growth of nitride materials. The ammonothermal approach proved to be eminently suitable for the growth of bulk III-nitride semiconductors like GaN, and furthermore provided access to numerous ternary and multinary nitrides and oxonitrides with promising optical and electronic properties. In this minireview, we will shed light on the latest research findings covering the synthesis of nitrides by this method. An overview of synthesis strategies for binary, ternary, and multinary nitrides and oxonitrides, as well as their properties and potential applications will be given. The recent development of autoclave technologies for syntheses at high temperatures and pressures, in situ methods for investigations of crystallization processes, and solubility measurements by ultrasonic velocity experiments is briefly reviewed as well. In conclusion, challenges and future perspectives regarding the synthesis and crystal growth of novel nitrides, as well as the advancement of autoclave techniques are discussed.

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Vacancy–hydrogen complexes in ammonothermal GaN

Cited by 45 publications

References 24 publications

Defects in Single Crystalline Ammonothermal Gallium Nitride

Defects in Single Crystalline Ammonothermal Gallium Nitride

Ammonothermal and HVPE Bulk Growth of GaN

Ammonothermal Synthesis of Nitrides: Recent Developments and Future Perspectives

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