2018
DOI: 10.1002/chem.201800115
|View full text |Cite
|
Sign up to set email alerts
|

Ammonothermal Synthesis of Nitrides: Recent Developments and Future Perspectives

Abstract: Nitrides represent an intriguing class of functional materials with a broad range of application fields. Within the past decade, the ammonothermal method became increasingly attractive for the synthesis and crystal growth of nitride materials. The ammonothermal approach proved to be eminently suitable for the growth of bulk III-nitride semiconductors like GaN, and furthermore provided access to numerous ternary and multinary nitrides and oxonitrides with promising optical and electronic properties. In this min… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
62
0
1

Year Published

2018
2018
2023
2023

Publication Types

Select...
7

Relationship

6
1

Authors

Journals

citations
Cited by 52 publications
(75 citation statements)
references
References 165 publications
1
62
0
1
Order By: Relevance
“…Eu II Eu III 2 Ta 2 N 4 O 3 was synthesized by an ammonothermal approach using custom‐built high‐temperature autoclaves made of nickel‐based superalloy , . Metallic Ta and Eu were used as powders.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…Eu II Eu III 2 Ta 2 N 4 O 3 was synthesized by an ammonothermal approach using custom‐built high‐temperature autoclaves made of nickel‐based superalloy , . Metallic Ta and Eu were used as powders.…”
Section: Resultsmentioning
confidence: 99%
“…Since the pioneering work of Jacobs and Juza in the 1960s, the ammonothermal method has emerged as a versatile synthetic approach for a broad spectrum of compounds, e.g. amides, imides, nitrides, hydroxides and chalcogenides . Despite this synthetic potential, synthesis in supercritical ammonia has been predominantly employed for crystal growth of GaN targeting appropriate substrate crystals for homoepitaxial growth of this important wide band gap semiconductor .…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…[48] Moreover,i na utoclaves large quantities can be prepared at once,w hich is relevant for industrial upscaling.I n1 997, Jacobs and co-workers prepared HPN 2 / DPN 2 by ammonolysis of P 3 N 5 at 550 8 8Ca nd 600 MPa, and K 3 P 6 N 11 from P 3 N 5 and KNH 2 at 500 8 8Ca nd 600 MPa. [33,50] With these autoclaves,Z n 2 PN 3 and Mg 2 PN 3 have recently been prepared from P 3 N 5 and metal amides,the latter in the form of single crystals of up to 30 mmi nlength (Figure 8). 600 8 8C, 0.3 GPa) and Haynes 282 (max.…”
Section: Autoclave and Ammonothermal Reactionsmentioning
confidence: 99%
“…[1][2][3][4][5] The ammonothermal technique gainedf undamentali nterest in materials science as it facilitates the growth of high-quality GaN single crystalsu pt o 50 mm in diameter with growth rates of several hundred mm per day. [1][2][3][4][5] The ammonothermal technique gainedf undamentali nterest in materials science as it facilitates the growth of high-quality GaN single crystalsu pt o 50 mm in diameter with growth rates of several hundred mm per day.…”
Section: Introductionmentioning
confidence: 99%