V2O5 thin films for gas sensor applications

Schneider, Krystyna; Lubecka, M.; Czapla, A.

doi:10.1016/j.snb.2016.04.059

Cited by 124 publications

(51 citation statements)

References 35 publications

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“…Reproduced with permission of Elsevier (2018) [587], [589] and [597]; ACS publishing "Copyright (2018) American Chemical Society" [591]; and Royal Society of Chemistry (2018) [592].…”

Section: Vanadium Oxidementioning

confidence: 99%

“…Vanadium oxide nanostructures have been widely used in the detection of toxic and flammable gases, however the high working temperature necessary to achieve good sensitivity, still remains a major challenge. Schneider et al[587] developed nanostructured V2O5 films for detection of hydrogen, methane and propane, with a good response (0.2) in the presence of 5 to 300 ppm of gas at 200 ºC(Figure 25 (a)).Some authors have reported the use of vanadium oxide as humidity sensor. Yin et al[558] reported on the hydrothermal synthesis of VO2(B) nanoflowers and their heattransformation into VO2(M), as well as their humidity sensing characteristics.…”

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confidence: 99%

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Metal oxide nanostructures for sensor applications

Nunes

Pimentel

Gonçalves

et al. 2019

Semicond. Sci. Technol.

237

119

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Human health, environmental protection and safety are just a few examples of current humankind main concerns, that drive the scientific community to develop sensors able to precisely monitor and alert to possible harms in real time. Over the years, semiconductor metal oxide-based materials have been largely employed as sensors dedicated to several applications, being particularly interesting at the nanometer scale, since it is largely known that smaller crystallite size enhances sensor's performance. Moreover, these materials are highly appealing as they can be produced by low-cost wet-chemical synthesis routes and are in general nontoxic, earth abundant and low-cost. This manuscript extensively reviews the recent developments of nanostructured semiconductor metal oxide sensors ranging from gas to humidity sensors, including ultraviolet (UV) sensors and biosensors. Zinc oxide (ZnO), titanium dioxide (TiO2), tungsten trioxide (WO3), copper oxide (CuO and Cu2O), tin oxide (SnO and SnO2), and vanadium oxide (VO2, V2O5)-based sensors either as nanoparticles or as continuous films/layers are described. Their sensing properties are correlated to size, shape, presence of defects, doping elements, amongst other relevant parameters. Different techniques and methods of fabricating these materials are addressed. The review is concluded with novel approaches for functionalization and future perspectives for sensor developments.

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“…Reproduced with permission of Elsevier (2018) [587], [589] and [597]; ACS publishing "Copyright (2018) American Chemical Society" [591]; and Royal Society of Chemistry (2018) [592].…”

Section: Vanadium Oxidementioning

confidence: 99%

mentioning

confidence: 99%

Metal oxide nanostructures for sensor applications

Nunes

Pimentel

Gonçalves

et al. 2019

Semicond. Sci. Technol.

237

119

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“…Because of their permanent structural flexibility associated with their chemical and physical properties. Different oxidation states can be obtained depending on the method of preparation and the type of source material, such as VO2, V2O3 and V2O5… [3,4].Vanadium pentoxide (V2O5) is the most oxidized state, the most stable form of crystallizationand most applicable in industry, mainly in Li-ion batteries [5,6], electrochromic and thermoelectric devices [7,8], gas sensors [9,10] and opto-electronic switches [11,12].…”

Section: Introductionmentioning

confidence: 99%

“…The lamellar structure of V2O5 can be distinguished by a series of VO5 pyramid pairs with roughly square base sharing a ridge. In these pyramids, five oxygen atoms surround the vanadium, one of these atoms is located in the apical position at a shorter distance of about 1.54 Å(this corresponds to a vanadyl bond) [9],and the other atoms are at a distance of about 2 Å. Two pairs of pyramids are linked together by an arete and thus create double zig-zag chains along the axis b.…”

Section: Introductionmentioning

confidence: 99%

Temperature effect on structural and optical properties of V₂O₅ thin films prepared by spray pyrolysis technique

et al. 2020

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In this work, the effect of substrate temperature on structural and optical properties of V2O5 thin films has been characterized by X-ray diffraction (XRD); SEM and transmission. The films mince has been prepared by Reactive Chemical Spraying technology in Liquid Phase (RCSLP) on glass substrates preheated at (350, 400, 450 and 500 °C). The X-ray diffraction analysis confirms that all layers are polycrystalline, and the preferred orientation of V2O5 is the (001) plane. The morphology of V2O5 thin films are porous nature and their particle’s shape is three-dimensional. The transmittance and absorbance of thin film were measured from which the optical constants (Energy gap, Refractive index, Absorption coefficient, Extinction coefficient and Optical dielectric constant) were determined.

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“…Vanadium pentoxide (V 2 O 5 ) is another prominent transition metal oxide due to its high work function with semiconducting and light transparent properties which shows charge generation/recombination and transportation in many device applications. Therefore, it has emerged as one of the most important semiconductors for different device applications namely, organic light emitting diodes, 11 photogenerated charges, 12 organic field effect transistors, 13 gas sensors, 14 Schottky diodes 15 and especially in photovoltaics. 16,17 In recent work,V 2 O 5 thin films have been used as hole conducting buffer layers for heterojunction solar cell and interdigited back contacted solar cells that achieved 15.7% and 19.7% conversion efficiency respectively.…”

Section: Introductionmentioning

confidence: 99%

Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

et al. 2017

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Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current–voltage (I–V) and capacitance–voltage (C–V) measurements ranging from 300 K to 150 K. Ideality factor (n) and barrier height (ϕ) for the Schottky device were obtained from I–V characteristics as 2.04 and 0.83 eV at 300 K and 6.95 and 0.39 eV at 150 K respectively. It was observed that in presence of inhomogeneity at metal–semiconductor interface, the ideality factor increases and barrier height decreases with the decrease of temperature. The Richardson constant value was estimated as 137 A–cm−2–K−2 from modified Richardson plot, which is closer to the known theoretical value of n-Si where mean value of barrier height (ϕb0¯), and its standard deviation (σ0) were estimated using double Gaussian distribution (DGD) analysis. Different device parameters, namely, built-in potential, carrier concentration, image force lowering and depletion width were also obtained from the C–V–T measurements. First time use of V2O5 thin-film as an interfacial layer (IL) on Au/V2O5/n-Si Schottky diode was successfully explained by the thermionic emission (TE) theory. The interesting result obtained in this present work is the V2O5 thin-film reduced its conducting capability with decreasing temperature, while it shows a totally insulating behaviour below 150 K.

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V2O5 thin films for gas sensor applications

Cited by 124 publications

References 35 publications

Metal oxide nanostructures for sensor applications

Metal oxide nanostructures for sensor applications

Temperature effect on structural and optical properties of V₂O₅ thin films prepared by spray pyrolysis technique

Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

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V2O5 thin films for gas sensor applications

Cited by 124 publications

References 35 publications

Metal oxide nanostructures for sensor applications

Metal oxide nanostructures for sensor applications

Temperature effect on structural and optical properties of V2O5 thin films prepared by spray pyrolysis technique

Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

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Temperature effect on structural and optical properties of V₂O₅ thin films prepared by spray pyrolysis technique