V -Band HJFET MMIC DROs With Low Phase Noise, High Power, and Excellent Temperature Stability

Hosoya, K.; Ohata, Kelichi; Funabashi, Masahiro; Inoue, Takashi; Kuzuhara, Masaaki

doi:10.1109/tmtt.2003.818937

Cited by 17 publications

(7 citation statements)

References 61 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High frequency low-noise microwave signals are required in various applications including high performance communication and radar systems. The signals are usually produced electronically by multiplying the frequency of quartz oscillators or are generated directly using microwave cavities [1]- [4]. Photonic techniques for generation of microwave signals provide an alternative solutions, adding new features to the microwave oscillators, such as ultra-low phase noise and small size [5]- [8].…”

Section: Introductionmentioning

confidence: 99%

Phase noise of whispering gallery photonic hyper-parametric microwave oscillators

Savchenkov¹,

Rubiola²,

Matsko³

et al. 2008

Opt. Express

View full text Add to dashboard Cite

We report on the experimental study of phase noise properties of a high frequency photonic microwave oscillator based on four wave mixing in calcium fluoride whispering gallery mode resonators. Specifically, the oscillator generates approximately 8.5 GHz signals with -120 dBc/Hz at 100 kHz from the carrier. The floor of the phase noise is limited by the shot noise of the signal received at the photodetector. We argue that the performance of the oscillator can be significantly improved if one uses extremely high finesse resonators, increases the input optical power, supersaturates the oscillator, and suppresses the residual stimulated Raman scattering in the resonator. We also disclose a method of extremely sensitive measurement of the integral dispersion of millimeter scale dielectric resonators.

show abstract

Section: Introductionmentioning

confidence: 99%

Phase noise of whispering gallery photonic hyper-parametric microwave oscillators

Savchenkov¹,

Rubiola²,

Matsko³

et al. 2008

Opt. Express

View full text Add to dashboard Cite

show abstract

“…Oscillators are a key component in any such network. In particular, with the current increases in frequency, the necessity for small size, low cost, high efficiency, and low noise has become paramount [1]. Dielectric resonators (DRs) offer a nearly ideal method of determining frequency due to their very high quality factor (Q) and small size.…”

Section: Introductionmentioning

confidence: 99%

“…Dielectric resonators (DRs) offer a nearly ideal method of determining frequency due to their very high quality factor (Q) and small size. This makes the dielectric resonator oscillator (DRO) an ideal candidate for solving oscillator stability issues [1]. There are many potential configurations of DROs using various types of feedback (series, parallel) to obtain the negative resistance used for oscillation [2].…”

Section: Introductionmentioning

confidence: 99%

Integrated on-chip Ba<inf>2</inf>Ti<inf>9</inf>O<inf>20</inf> dielectric resonator oscillator in GaAs technology

Freundorfer

Bijumon

Sayer

2009

2009 IEEE MTT-S International Microwave Symposium Digest

View full text Add to dashboard Cite

We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 µm GaAs MESFET that had the Ba 2 Ti 9 O 20 dielectric resonator (DR) grown to the surface of the chip at a temperature of 150 o C without destroying the devices of the IC. It was compared to a DRO that had a commercially available DR, Ba(Zn 1/3 Ta 2/3 )O 3 , epoxied to it. The Ba 2 Ti 9 O 20 DRO had a measured output power power of 5.68dBm at 25.6 GHz and a phase noise of -114 dBc @ 1MHz.

show abstract

“…Due to the high 1/f-noise of high electron mobility transistors, HEMT based oscillators are needed to be stabilized. Common stabilization concepts for monolithically integrated oscillators are based on external high-quality resonators, like dielectric or cavity type resonators [1,2]. Another approach is the synchronization of the oscillator with an external reference signal.…”

Section: Introductionmentioning

confidence: 99%

A PLL-Stabilized W-Band MHEMT Push-Push VCO with Integrated Frequency Divider Circuit

Weber

Kuri

Lang

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

View full text Add to dashboard Cite

In this paper, a PLL-based stabilization technique for monolithic integrated W-band voltage controlled oscillators (VCOs) is presented. A 92 GHz push-push oscillator in coplanar waveguide technology and a frequency divider by eight were developed and integrated on a single MMIC using our established 100 nm metamorphic HEMT technology. The oscillator achieves a tuning range of 3.4 GHz around the center frequency of 92 GHz and an output power of more than 5.5 dBm. By applying this concept, the VCO was synchronized to a low frequency reference signal at 180 MHz using a commercially available PLL circuit. Compared to the free running oscillator, the phase-noise was improved by 24 dB to -77 dBc/Hz at 100 kHz offset from the carrier.Index Terms -Coplanar waveguide technology (CPW), frequency divider, metamorphic high electron mobility transistor (MHEMT), phase-locked loop (PLL), push-push oscillator, voltage controlled oscillator (VCO), W-band.

show abstract

V -Band HJFET MMIC DROs With Low Phase Noise, High Power, and Excellent Temperature Stability

Cited by 17 publications

References 61 publications

Phase noise of whispering gallery photonic hyper-parametric microwave oscillators

Phase noise of whispering gallery photonic hyper-parametric microwave oscillators

Integrated on-chip Ba<inf>2</inf>Ti<inf>9</inf>O<inf>20</inf> dielectric resonator oscillator in GaAs technology

A PLL-Stabilized W-Band MHEMT Push-Push VCO with Integrated Frequency Divider Circuit

Contact Info

Product

Resources

About