Integrated on-chip Ba<inf>2</inf>Ti<inf>9</inf>O<inf>20</inf> dielectric resonator oscillator in GaAs technology

Abstract

We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 µm GaAs MESFET that had the Ba 2 Ti 9 O 20 dielectric resonator (DR) grown to the surface of the chip at a temperature of 150 o C without destroying the devices of the IC. It was compared to a DRO that had a commercially available DR, Ba(Zn 1/3 Ta 2/3 )O 3 , epoxied to it. The Ba 2 Ti 9 O 20 DRO had a measured output power power of 5.68dBm at 25.6 GHz and a phase noise of -114 dBc @ 1MHz.