V-Band High Isolation Subharmonic Monolithic Mixer With Hairpin Diplexer

Hung, Shih-Han; Chien, Wei-Ming; Lin, Chih‐Ming; Lai, Yu-Ann; Wang, Yeong-Her

doi:10.2528/pierl10070701

Cited by 7 publications

(5 citation statements)

References 8 publications

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“…Mixer based circuits, either in microstrip [5,6] or monolithic technology [7][8][9], tipically use diodes [10][11][12] or transistors [13][14][15] as active components, in order to generate the nonlinear behaviour. Creating wideband mixers in microstrip technology can be a real challenge for many designers.…”

Section: Introductionmentioning

confidence: 99%

Millimeter Wave Microstrip Mixer Based on Graphene

Hotopan¹,

Hoeye²,

Vázquez³

et al. 2011

PIER

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Abstract-In this work, a millimeter wave microstrip frequency-mixer design based on graphene is presented. The desired frequency mixing behavior is obtained using a nonlinear component consisting in a microstrip line gap covered by a graphene layer. The circuit includes microstrip filters that have been designed to obtain a high isolation between the input and output ports. The nonlinear behavior of the frequency mixer has been experimentally evaluated in the 38.6-40 GHz input signal frequency range, for different values of the input power and local oscillator power.

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Section: Introductionmentioning

confidence: 99%

Millimeter Wave Microstrip Mixer Based on Graphene

Hotopan¹,

Hoeye²,

Vázquez³

et al. 2011

PIER

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“…Another advantage is that the wide frequency gap between the RF and LO signals simplifies the LO and RF separation. Frequency mixer circuits, either in microstrip [11][12][13] or in monolithic technology [14][15][16][17][18], generally use transistors [19][20][21][22][23][24], or diodes [25][26][27][28], in order to generate the desired nonlinear behavior.…”

Section: Introductionmentioning

confidence: 99%

Millimeter Wave Subharmonic Mixer Implementation Using Graphene Film Coating

Hotopan¹,

Hoeye²,

Vázquez³

et al. 2013

PIER

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In this work, a subharmonic frequency mixer for millimeter wave applications has been designed. The mixing and multiplication phenomena are simultaneously achieved via a nonlinear component consisting in a microstrip line gap covered by a graphene film coating. The circuit structure is made up of various filters, which have been optimized to ensure high port-to-port isolation. The nonlinear behavior of the subharmonic frequency mixer has been experimentally evaluated within the 39-40.5 GHz RF frequency band. The frequency downconversion is achieved by mixing the RF signal with the second harmonic component of a 17.9 GHz LO signal. Conversion losses are minimized by generating a return path for IF, through the use of a quarter wavelength open-ended stub.

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“…A 16-46 GHz mixer using a broadside-coupled balun fabricated in standard CMOS process achieved a bandwidth from 16 to 46 GHz with a conversion loss ranging from 13 ± 1.5 dB and a compact chip size of 0.24 mm 2 [6]. [7] employed an edge-coupled transmission line Marchand balun to feed the LO and RF ports of a ring-type W-band DBM. [8] designed a doubly balanced mixer using two novel configurations of dual baluns in 0.15 µm GaAs pHEMT process.…”

Section: Introductionmentioning

confidence: 99%

Balanced Mixers Using Wideband Symmetric Offset Stack Balun in 0.18 Um Cmos

Chiou¹,

Lin²

2011

PIER C

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This work proposes a symmetrical offset stack coupled lines balun and a dual balun for a single balanced mixer and a star mixer, respectively. To achieve a minimum insertion loss and a maximum bandwidth, the design formulas are derived by properly selecting the width of coupled lines and the offset width between two coupled lines. The measured results of the proposed single and dual baluns achieve the bandwidths of over 110% and 90%, and insertion losses less than 4.4 dB and 7.4 dB at 38 GHz. These two baluns occupy chip sizes of 0.07 mm 2. Two balanced diode mixers are further proposed and implemented in tsmc TM 0.18-µm CMOS processes. These mixers utilize a stack balun feature wide bandwidth with very compact size. The measured results of the single balanced and star mixer achieve over 115% and 100% bandwidth for a conversion loss of < 15 dB. The isolations are better than 24 dB from 10 to 65 GHz of the single balance mixer and better than 31 dB from 20 to 65 GHz of the star mixer.

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V-Band High Isolation Subharmonic Monolithic Mixer With Hairpin Diplexer

Cited by 7 publications

References 8 publications

Millimeter Wave Microstrip Mixer Based on Graphene

Millimeter Wave Microstrip Mixer Based on Graphene

Millimeter Wave Subharmonic Mixer Implementation Using Graphene Film Coating

Balanced Mixers Using Wideband Symmetric Offset Stack Balun in 0.18 Um Cmos

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