UV photodetectors in 6HSiC

Anikin, M. M.; Andreev, A. N.; Pyatko, S. N.; Savkina, N.S.; Strel'chuk, Anatoly M.; Syrkin, A. L.; Chelnokov, V. E.

doi:10.1016/0924-4247(92)80233-s

Cited by 23 publications

(10 citation statements)

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“…9 ZnMgBeSe photodetectors also compare advantageously with 6H-SiC ͑0.15 A/W͒, 10 GaN ͑0.10-0.18 A/W͒, 11 and AlGaN ͑0.07 A/W͒. This is close to the theoretical limit, since we can roughly estimate that 25% of the incident light is lost by reflection on the surface and 10% by absorption in the semitransparent contact layer.…”

supporting

confidence: 75%

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Vigué

Tournié

Faurie

et al. 2001

Applied Physics Letters

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Planar geometry Schottky barrier photodiodes designed for visible-blind ultraviolet detection have been fabricated. They are based on ZnMgBeSe alloys grown by molecular-beam epitaxy. High crystalline quality is achieved, which leads to a high responsivity (0.17 A/W at 375 nm) and a sharp cutoff of more than three orders of magnitude. As attested by the linear variation of the photocurrent with the optical excitation, there is no internal gain mechanism. A detectivity of 2×1010 mHz1/2 W−1 is obtained showing that low-noise devices with high sensitivity have been fabricated.

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supporting

confidence: 75%

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Vigué

Tournié

Faurie

et al. 2001

Applied Physics Letters

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“…6H-SiC Schottky photodiodes were based on n -type or p -type SiC, working in the 200–400 nm spectral range [72,73]. Anikin et al reported the high-quality Schottky junction on n -type SiC with the Schottky barrier height of 1.4–1.63 eV by using Au [74]. The device showed a very low leakage current in the order of 100 pA for a reverse bias voltage of −100 to −170 V, and a high responsivity of 150 mA/W at 215 nm.…”

Section: Semiconductor Thin-film Uv Photodetectormentioning

confidence: 99%

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Sang

Liao

Sumiya

2013

Sensors

717

435

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Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

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“…SiC SBDs have also been used as detectors for radiations such as UV light [174][175][176][177], neutrons [178] and others [179][180][181][182][183].…”

Section: Sic Sbd As Uv Detectormentioning

confidence: 99%

Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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UV photodetectors in 6HSiC

Cited by 23 publications

References 0 publications

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Silicon Carbide Schottky Barrier Diode

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