UV-NIL templates for the 22nm node and beyond

Hiraka, Takaaki; Yusa, Satoshi; Fujii, Akiko; Sasaki, Shiho; Itoh, Kimio; Toyama, Nobuhito; Kurihara, Masaaki; Mohri, Hiroshi; Hayashi, Naoya

doi:10.1117/12.746655

Cited by 5 publications

(6 citation statements)

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“…Higher aspect ratios cause release failure, namely plug defects or pattern collapse. 35 In addition, the etching mask must be prepared from a resist pattern with a relatively thick residual layer (approximately 10 nm). For this reason, the etching resistance of UV-NIL resist is more important than that of photolithography.…”

Section: Dry Etching Resistancementioning

confidence: 99%

Design considerations for ultraviolet-nanoimprint lithography resists

Usuki

Wakamatsu

Oomatsu

et al. 2012

J. Micro/Nanolith. MEMS MOEMS

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Design considerations for ultraviolet-nanoimprint lithography resists were investigated focusing on the major issues of ink-jetting performance, pattern formability, release property, and dry etching resistance. Regarding ink-jetting performance, small droplet ink-jetting of 0.7 pl was successfully demonstrated by adjusting the resist fluid property to the ink-jet coater and controlling the resist volatilization. Regarding pattern formability, a resist pattern was imprinted from a mold pattern of 28 nm in width and 60 nm in depth without pattern dimension change. It was thought that modulus control of the resist was more important than resist shrinkage in achieving excellent pattern formability. As for release property, resist with fluorine monomer and with nonreactive fluorine antisticking agent were compared. The results indicated that resist design has the capability to both reduce separation force and maintain a clear mold surface. The mold release agent decomposed with an increasing number of imprint shots, but the low release-force resist with nonreactive antisticking agent was able to control degradation of the mold release agent and thus improve release property endurance. Regarding etching resistance, it was found that increasing the ring parameter of resist is essential for high etching resistance, and resulted in improved etched pattern features of the substrate.

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Section: Dry Etching Resistancementioning

confidence: 99%

Design considerations for ultraviolet-nanoimprint lithography resists

Usuki

Wakamatsu

Oomatsu

et al. 2012

J. Micro/Nanolith. MEMS MOEMS

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“…However, as feature sizes of the UV-NIL templates are the same as the wafer patterns, there are enormous challenges such as writing and inspecting smaller patterns for NIL template fabrication. In our previous works, we have achieved less than hp 16nm resolution with a 100keV spot beam writer and non CAR processes [1] . We also reported optimization of metrology for NIL templates [2] and the characterization of anti-sticking layers with scaning probe microscopies [3] .…”

Section: Introductionmentioning

confidence: 99%

Development status of back-end process for UV-NIL template fabrication

Inazuki

Itoh

Hatakeyama

et al. 2008

Photomask Technology 2008

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Nano-imprint lithography (NIL) is eminently suitable for low cost patterning for nanostructures. As feature sizes of the UV-NIL templates are the same as the wafer patterns, there are enormous challenges such as writing and inspecting smaller patterns for NIL template fabrication. In our previous works, we achieved less than 16nm resolution with a 100keV spot beam writer and non CAR. We also reported optimization of metrology for NIL templates and the characterization of anti-sticking layers with scanning probe microscopies.Normally the template is made from a 6025 photomask blank. After the blank undergoes a process similar to the photomask process, it is diced into 65 mm x 65 mm size and four pieces, and then each piece is polished into its final shape. Therefore it becomes difficult to inspect and clean them, because 65 mm substrates are unfamiliar in photomask industry. In order to reach the step for mass-production of the templates, the development of "back-end process", which includes not only cleaning and inspection but also repair, dicing, polishing, and coating anti-sticking layers, is essential. Especially keeping low contamination level during dicing and polishing processes is one of the critical issues.In this paper, we report our development status of "back-end process" for NIL templates. Especially, we focus on the techniques of reducing adder defects during dicing process and improving cleaning capability.

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“…For an optical photomask, the minimum diameter of the particle that requires cleaning is ∼100 nm considering that the CD of a photomask is four times larger than that of wafer and ≤50 nm for EUV. In nanoimprint lithography (NIL), 6,7 a fine pattern is directly translated into a template without reduction; thus, the target minimum particle diameter is ∼10 nm. However, particles with diameters smaller than 100 nm are hard to remove, as described below.…”

Section: Introductionmentioning

confidence: 99%