UV effect on NO 2 sensing properties of nanocrystalline In 2 O 3

Ilin, Alexander; Martyshov, M. N.; Форш, Е. А.; Форш, П. А.; Rumyantseva, M. N.; Abakumov, Artem M.; Gaskov, Alexander; Кашкаров, П. К.

doi:10.1016/j.snb.2016.03.051

Cited by 58 publications

(18 citation statements)

References 22 publications

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“…(ii) At room temperature under dark conditions, the adsorption of NO 2 on the surface of n-type semiconductor oxides is an irreversible process: when NO 2 is removed from the atmosphere, there is no return of the conductivity (resistance) to its initial value in pure air [24,59]. The role of illumination probably consists in the photogeneration of holes that ensure the conversion of chemisorbed NO 2 − particles into physically adsorbed NO 2 , which can be desorbed from the surface of the semiconductor oxide even at room temperature.…”

Section: Gas Sensor Propertiesmentioning

confidence: 99%

Organic-Inorganic Hybrid Materials for Room Temperature Light-Activated Sub-ppm NO Detection

et al. 2019

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Nitric oxide (NO) is one of the main environmental pollutants and one of the biomarkers noninvasive diagnosis of respiratory diseases. Organic-inorganic hybrids based on heterocyclic Ru (II) complex and nanocrystalline semiconductor oxides SnO 2 and In 2 O 3 were studied as sensitive materials for NO detection at room temperature under periodic blue light (λ max = 470 nm) illumination. The semiconductor matrixes were obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, Raman spectroscopy, and single-point BET methods. The heterocyclic Ru (II) complex was synthesized for the first time and characterized by 1 H NMR, 13 C NMR, MALDI-TOF mass spectrometry and elemental analysis. The HOMO and LUMO energies of the Ru (II) complex are calculated from cyclic voltammetry data. The thermal stability of hybrids was investigated by thermogravimetric analysis (TGA)-MS analysis. The optical properties of Ru (II) complex, nanocrystalline oxides and hybrids were studied by UV-Vis spectroscopy in transmission and diffuse reflectance modes. DRIFT spectroscopy was performed to investigate the interaction between NO and the surface of the synthesized materials. Sensor measurements demonstrate that hybrid materials are able to detect NO at room temperature in the concentration range of 0.25-4.0 ppm with the detection limit of 69-88 ppb.Nanomaterials 2020, 10, 70 2 of 22 in noninvasive diagnosis of respiratory diseases [7][8][9]. In this case, the limitation of the quantitative determination of NO in exhaled air is due to the low level of its concentration (20-200 ppb) among a wide range of interfering gases [10].Direct determination of nitrogen monoxide in the gas phase is possible using conductometric gas sensors based on various semiconductor metal oxides [7,[10][11][12][13][14][15][16][17][18][19][20][21][22]. To increase selectivity of such analysis along with lower power consumption, complete or partial replacement of thermal heating with photoactivation is a promising approach. Activation of the sensor response under illumination occurs through various mechanisms depending on the nature of the target gas. For oxidizing gases (NO 2 , O 3 ), which compete with oxygen for the same adsorption sites, photogeneration of electron-hole pairs plays a major role in the photodesorption process. On the contrary, for the detection of reducing gases (CO, NH 3 , H 2 S), the presence of chemisorbed oxygen on the surface of the semiconductor oxide is necessary. In this case, the increase in the sensor response under illumination is due to the unpinning of Fermi level of the semiconductor. In most works NO is detected as oxidizing gas. The similar routes of NO and NO 2 sensing was recently evidenced by in situ DRIFT spectroscopy [23]. Our previous works show that highly selective NO 2 detection is possible using visible light photoactivation [24][25][26][27]. To shift the optical sensitivity of semiconductor oxides into the visible range, it is necessary to create defects in the semiconductor matrix or i...

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Section: Gas Sensor Propertiesmentioning

confidence: 99%

Organic-Inorganic Hybrid Materials for Room Temperature Light-Activated Sub-ppm NO Detection

et al. 2019

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“…In most cases, for this purpose, the n-type semiconductors such as SnO 2 [14][15][16][17][18][19][20], ZnO [21][22][23][24][25][26], WO 3 [27][28][29][30][31][32], In 2 O 3 [33,34], and TiO 2 [35] are used traditionally. In recent years, the search of the materials, which would be capable to lower the detection limit of oxidizing gases, became more active.…”

Section: Novel Nanomaterials -Synthesis and Applicationsmentioning

confidence: 99%

Palladium (II) Oxide Nanostructures as Promising Materials for Gas Sensors

Samoylov¹,

Ryabtsev²,

Popov³

et al. 2018

Novel Nanomaterials - Synthesis and Applications

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One of the most important environment monitoring problems is the detection of oxidizing gases in the ambient air. Negative impact of noxious oxidizing gases (ozone and nitrogen oxides) on human health, sensitive vegetation, and ecosystems is very serious. For this reason, palladium (II) oxide nanostructures have been employed for oxidizing gas detection. Thin and ultrathin films of palladium (II) oxide were prepared by thermal oxidation at dry oxygen of previously formed pure palladium layers on polished poly-Al 2 O 3 , SiO 2 /Si (100), optical quality quartz, and amorphous carbon/KCl substrates. At ozone and nitrogen dioxide detection, PdO films prepared by oxidation at T = 870 K have demonstrated good values of sensitivity, signal stability, operation speed, and reproducibility of sensor response. In comparison with other materials, palladium (II) oxide thin and ultrathin films have some advantages at gas sensor fabrication. Firstly, for oxidizing gas detection, PdO films with p-type conductivity are more perspective than the material with n-type conductivity. Secondly, at ambient conditions, palladium (II) oxide is insoluble in water and does not react with it. These facts are favorable for the fabrication of gas detectors because they make possible to minimize the air humidity influence on PdO sensor response values. Thirdly, the synthesis procedure of PdO films is rather simple and is compatible with planar processes of microelectronic industry.

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“…Электрические свойства пленок оксида индия сильно зависят от метода синтеза и структуры. Разработано довольно много методов синтеза пленок оксида индия: золь-гель метод [9,10], электронное и термическое испарение [4,11,12], метод магнетронного напыления [13], осаждение из газовой фазы [14], осаждение с помощью лазерной абляции [15]. Среди многочисленных методов метод термического испарения имеет ряд преимуществ -он сравнительно дешевый, простой, обеспечивает получение пленок в том числе и в промышленных масштабах.…”

Section: Introductionunclassified

Электрические Свойства Тонких Пленок Оксида Индия, Полученных Методом Плазменно-Термического Испарения

Ильин¹,

Мацукатова²,

Форш³

et al. 2018

Физика И Техника Полупроводников

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Исследованы структура и электрические свойства прозрачных тонких пленок оксида индия, полученных методом плазменно-термического испарения при различных температурах подложки. Определено, что пленки имеют зернистую структуру. Увеличение температуры подложки приводит к значительному росту проводимости пленок и к уменьшению времени релаксации фотопроводимости. Предложено объяснение влияния температуры подожки на наблюдаемые изменения электрических и фотоэлектрических свойств исследованных пленок оксида индия.

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UV effect on NO 2 sensing properties of nanocrystalline In 2 O 3

Cited by 58 publications

References 22 publications

Organic-Inorganic Hybrid Materials for Room Temperature Light-Activated Sub-ppm NO Detection

Organic-Inorganic Hybrid Materials for Room Temperature Light-Activated Sub-ppm NO Detection

Palladium (II) Oxide Nanostructures as Promising Materials for Gas Sensors

Электрические Свойства Тонких Пленок Оксида Индия, Полученных Методом Плазменно-Термического Испарения

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