UV and blue light emission from SiC nanoclusters in annealed amorphous SiC alloys

Xu, Jun; Mei, Jiaxin; Rui, Yunjun; Chen, Deyuan; Cen, Zhanhong; Ma, Zhongyuan; Xu, Ling; Huang, Xinfan; Chen, Kunji

doi:10.1016/j.jnoncrysol.2006.01.053

Cited by 17 publications

(5 citation statements)

References 17 publications

(25 reference statements)

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“…The PL emissions near 500 nm may be related to the functional group bond of Si–C. In addition, similar PL peaks near 500 nm have been found in annealed amorphous SiC alloys in our previous work [ 43 ]. It is also found that pronounced peaks near 500 nm can be observed in SiC x , SiC x O y nanoclusters and silicon-rich silicon oxide enriched with C [ 44 , 45 , 46 ].…”

Section: Resultssupporting

confidence: 81%

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Sun

Chen

et al. 2023

Nanomaterials

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Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

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Section: Resultssupporting

confidence: 81%

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Sun

Chen

et al. 2023

Nanomaterials

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“…In our previous work, we have studied the microstructures and optical properties of hydrogenated amorphous SiC (a-SiC:H) films prepared in plasma enhanced chemical vapor deposition system [8,9]. It was found that the optical properties were strongly influenced by the microstructures and chemical bonding configurations.…”

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix

Song

Rui

Wang

et al. 2011

Journal of Alloys and Compounds

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“…In this case, annealed effect is different with others. The PL spectra increased, and PL peak position was changed [4]. The peak of as-deposited sample at 558 nm and 643 nm, while after annealing above 150 ℃, peaks at 517 nm and 601 nm.…”

Section: Si-h 663mentioning

confidence: 97%

Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

Hwang¹,

Lee²,

Lee³

et al. 2009

ECS Trans.

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Si/SiC composite films, namely, Si nanocrystals in a-SiC matrix material, were deposited by using Cat-CVD. Photoluminescence characteristics of a-SiC thin films prepared with various gas ratio R=[CH4]/[SiH4] were investigated. Fourier-transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) measurements composition ratio of a-SiC films. It shows different composition ratio between R > 10 and R < 10. Photoluminescence (PL) intensity was changed before and after thermal annealing at various temperatures. The PL intensity was increased after annealing peak position was shift short wavelength range.

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UV and blue light emission from SiC nanoclusters in annealed amorphous SiC alloys

Cited by 17 publications

References 17 publications

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix

Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

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