Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix

Song, Chao; Rui, Yunjun; Wang, Quanbiao; Xu, Jun; Li, Wei; Chen, Kunji; Zuo, Yuhua; Wang, Qiming

doi:10.1016/j.jallcom.2010.12.191

Cited by 44 publications

(22 citation statements)

References 19 publications

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“…2) of the milled powders is similar to that of the raw mixed powders except disappearance of Si vibration band at 500 cm −1 [17]. Amorphous Si and SiC show weak and broad vibration band in Raman spectra [18][19][20], so they are difficult to detect by Raman analysis. FTIR analysis is carried out and shown in Fig.…”

Section: Resultsmentioning

confidence: 83%

Low temperature sintering of ZrC–SiC composite

Zhao

Jia

Duan

et al. 2011

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 83%

Low temperature sintering of ZrC–SiC composite

Zhao

Jia

Duan

et al. 2011

Journal of Alloys and Compounds

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“…The conductivity can be as high as 630 S/cm with the mobility of 17.9 cm 2 /V·s, which is significantly higher than that of doped SiC and SiC powder compact reported previously. 14,27 Further increasing doping ratio R results in the slight reduction of mobility but the conductivity still keeps its high level. The increasing of mobility with the doing concentrations can be attributed to the improved crystallinity due to the enhanced crystallization as discussed before which reduces scattering with the disordered amorphous structures.…”

Section: -6mentioning

confidence: 99%

“…However, the SiC matrix with a large band gap usually has a poor conductive property and in turn impedes the carrier transport process which will deteriorate the device performance. 13,14 Lechner et al fabricated the doped nc-Si films and they obtained the maximum conductivity up to about 5 S/cm with the very small conductivity activation energy. 15 From the view point of device application, it is highly desired to get nc-Si:SiC films with high conductivity at the suitable optical band gap (>2.5 eV) so that they can act as the window layer or the conductive layer in nano-crystalline SiC film-based optoelectronic devices without absorbing incident (or emitted) light too much.…”

Section: Introductionmentioning

confidence: 99%

Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap

Shan

Qian

et al. 2016

AIP Advances

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High conductive phosphorus-doped nano-crystalline Si embedded in Silicon-Carbide (SiC) host matrix (nc-Si:SiC) films were obtained by thermally annealing doped amorphous Si-rich SiC materials. It was found that the room conductivity is increased significantly accompanying with the increase of doping concentrations as well as the enhanced crystallizations. The conductivity can be as high as 630 S/cm for samples with the optical band gap around 2.7 eV, while the carrier mobility is about 17.9 cm2/ V·s. Temperature-dependent conductivity and mobility measurements were performed which suggested that the carrier transport process is strongly affected by both the grain boundaries and the doping concentrations.

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“…A small band offset increases the tunneling probability from one Si NC to the other and hence the conductivity of the material, making transport less sensitive to variations in NC separation [7,8]. Although material quality has improved in recent years [9][10][11][12][13][14][15][16], the recently presented first all-Si tandem solar cell with a Si NC top cell absorber shows low efficiency and no clear evidence of quantum confinement [17]. Therefore, further investigation of Si NC in SiC is necessary and is the topic of this work.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of silicon nanocrystals embedded in silicon carbide: Comparison of single layers and multilayer structures

Weiss

Schnabel

Reichert

et al. 2015

Applied Surface Science

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The outstanding demonstration of quantum confinement in Si nanocrystals (Si NC) in a SiC matrix requires the fabrication of Si NC with a narrow size distribution. It is understood without controversy that this fabrication is a difficult exercise and that a multilayer (ML) structure is suitable for such fabrication only in a narrow parameter range. This parameter range is sought by varying both the stoichiometric SiC barrier thickness and the Si-rich SiC well thickness between 3 and 9 nm and comparing them to single layers (SL). The samples processed for this investigation were deposited by plasma-enhanced chemical vapor deposition (PECVD) and subsequently subjected to thermal annealing at 1000-1100 degrees C for crystal formation. Bulk information about the entire sample area and depth were obtained by structural and optical characterization methods: information about the mean Si NC size was determined from grazing incidence X-ray diffraction (GIXRD) measurements. Fourier-transform infrared spectroscopy (FTIR) was applied to gain insight into the structure of the Si-C network, and spectrophotometry measurements were performed to investigate the absorption coefficient and to estimate the bandgap E-04. All measurements showed that the influence of the ML structure on the Si NC size, on the Si-C network and on the absorption properties is subordinate to the influence of the overall Si content in the samples, which we identified as the key parameter for the structural and optical properties. We attribute this behavior to interdiffusion of the barrier and well layers. Because the produced Si NC are within the target size range of 2-4 nm for all layer thickness variations, we propose to use the Si content to adjust the Si NC size in future experiments

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Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix

Cited by 44 publications

References 19 publications

Low temperature sintering of ZrC–SiC composite

Low temperature sintering of ZrC–SiC composite

Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap

Structural and optical properties of silicon nanocrystals embedded in silicon carbide: Comparison of single layers and multilayer structures

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