Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory

Jiang, Hao; Stewart, Derek A.

doi:10.1021/acsami.7b00139

Cited by 50 publications

(28 citation statements)

References 59 publications

(148 reference statements)

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“…A late trend towards the development of MO films with desirable electrical characteristics is the introduction of appropriate dopants that could affect the formation energy for the oxygen vacancies and thus allow tailoring the MO film electrical properties [10]. As an example, the introduction of Al in TiO 2 , that is one of the most celebrated MO, revealed improved switching characteristics in RRAMs [11], while it is theoretically predicted that Al could also act as "acceptor" type dopant enabling p-type conductivity [12].…”

Section: Introductionmentioning

confidence: 99%

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Michalas

Trapatseli

Stathopoulos

et al. 2018

IEEE Trans. Nanotechnology

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Emerging memory technologies have sparked great interest in studying a variety of materials that can be employed in metal-insulator-metal topologies to support resistive switching. While the majority of reports focus on identifying appropriate materials that can be used as active core layers, the selection of electrodes also impacts the performance of such memory devices. Here, both the top and the bottom interfaces of symmetric Metal-Al:TiO x -Metal structures have been investigated by the analysis of their current versus voltage characteristics in the temperature range of 300-350 K. Three different metals were utilized as electrodes, Nb, Au, and Pt, for covering a wide range of work function and electronegativity values. Despite their symmetric structure, the devices were found to exhibit asymmetric performance with respect to the applied bias polarity. Clear signature plots indicating thermionic emission over the interface Schottky barriers have been obtained. The asymmetry between the top and the bottom interfaces was further evaluated by the values of the potential barrier heights and by the barrier lowering factors, both calculated from the experimental data. This study highlights the importance of the interface effects and proves that in addition to film doping, proper (top/bottom) metal selection, and interface engineering should also be exploited for developing thin film metal oxide based devices with tailored electrical characteristics.

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Section: Introductionmentioning

confidence: 99%

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Michalas

Trapatseli

Stathopoulos

et al. 2018

IEEE Trans. Nanotechnology

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“…Moreover, the vacancies likely formed at the Chalcogenide-electrode interface during the repeatable writing of PCMs may cause the device failure at the high resistance state [188]. This issue can be effectively addressed by adding carbon dopants inside the Ge-Sb-Te media to circumvent the interfacial vacancies formation [187], [189]. Besides, the distance pitch between neighboring synapses in the whole networks is usually required to be very short to increase the density scale.…”

Section: Outlooksmentioning

confidence: 99%

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Liu

Wang

2020

IEEE Access

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Phase-change materials, also well known as the Chalcogenide alloy, have received considerable attention during last two decades owing to its widespread applications in the field of the electrical storage market such as phase-change random access memory and phase-change probe memory. In addition to the storage devices, its unique electrical properties that can be dynamically tunable with respect to the electrical excitations lead to numerous novel applications represented by memristor and memristor-based neuromorphic electrical circuits. These emerging applications undoubtedly allows for a further exploitation of the potential of phase-change materials, and thus makes it advantageous over other storage medium like ferroelectric and magnetic materials. In order to help researchers understand the role of phase-change materials in these novel applications as well as their importance for citizen's daily life, a comprehensive review that not only covers the traditional storage applications, but also the applications on these exotic devices becomes imperative. In this review, the chemical structure of phase-change materials and their remarkable electrical properties are first reviewed, followed by an introduction of their applications on the storage fields. The physical principles of various emerging electrical devices using phase-change materials are subsequently overviewed in association with their state-of-the-art progress. The prospect of phase-change materials for the future non-volatile electrical applications that are yet to be unraveled is finally envisaged.

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“…Jiang et al systematically investigated the effects of various metal dopants on the formation of oxygen vacancy in amorphous as well as crystalline Ta 2 O 5 based on first principle, where the doping trend ought to normally valid for representative binary transition metal oxides. [132] In addition, Miao et al provided a HfO 2 -based ReRAM array achieving Boolean logic realized by a temporal programmable dimension. [133] They also designed 1bit full adder with implementation of logic functions, which offers absorbing scheme to construct logic-in memory systems.…”

Section: Metal Oxidementioning

confidence: 99%

“…For example, low‐temperature grown or solution‐processed TiO 2 , Al 2 O 3 thin film, as well as CeO x have been investigated. Jiang et al systematically investigated the effects of various metal dopants on the formation of oxygen vacancy in amorphous as well as crystalline Ta 2 O 5 based on first principle, where the doping trend ought to normally valid for representative binary transition metal oxides . In addition, Miao et al provided a HfO 2 ‐based ReRAM array achieving Boolean logic realized by a temporal programmable dimension .…”

Section: Resistive Switching Memorymentioning

confidence: 99%

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Wang

Zhang

Zhou

et al. 2019

Physica Rapid Research Ltrs

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As one of the five basic components in a modern computer system, memory plays a key role in data storage while the Von Neumann architecture still occupies a principal position in modern digital era. With the rapid development of portable electronic devices, non‐volatile memories are of great importance in human's daily life. High‐performance memory devices are highly demanded, and novel materials applied to flash memory and resistive random access memory (ReRAM) have been widely investigated. The functionalities of memories can be broadened with the development of semiconductor technologies. As a facile and low‐power electromagnetic wave, light can be another modulation medium, which will not bring destructive operation and can enhance the device performance. In this review, the focus is on flash memory and ReRAM based on various functional materials as well as the recent development of photo‐tunable memories.

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Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory

Cited by 50 publications

References 59 publications

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

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